Oxygen Vacancy-Induced Ferromagnetism and Resistive-Magnetization Switching Characteristics in In2O3 Films

Ordered porous indium oxide thin films (In2O3) with higher ferromagnetism were prepared by the directcurrentmagnetron sputtering method using porous anodic aluminum oxide thinfilms as the template. The experiment results show that the saturationmagnetization reaches a maximum of about 42.03 emu/cm(3) ata sputtering pressure of 3.2 Pa. The room-temperature ferromagnetismof In2O3 films mainly originates from the oxygenvacancies in the films. In addition, the spin can generally only beregulated by a magnetic field, which makes it challenging to realizeminiaturization and integration of spin devices, while the regulationby an electric field can solve this contradiction. Based on this,the In2O3 composite thin-film resistive-magnetizationswitching device (Ag/In2O3/PAA/Al) was successfullyprepared, showing bipolar resistive-magnetization switching characteristicsand stable electrical and magnetic control characteristics. This researchprovides a way to develop a new multifunctional memory combining magneticand resistive-magnetization storage and lays the foundation for theapplication of In2O3 in spintronic devices.

Automated summary

Ordered porous indium oxide thin films with higher ferromagnetism were prepared using the direct current magnetron sputtering method. The room-temperature ferromagnetic properties of the films were mainly due to the presence of oxygen vacancies. A composite thin-film resistive-magnetization switching device based on In2O3 was successfully developed, showing stable electrical and magnetic control characteristics. This research opens the possibility for the application of In2O3 in spintronic devices.