Related references
Note: Only part of the references are listed.Diamond semiconductor and elastic strain engineering
Chaoqun Dang et al.
JOURNAL OF SEMICONDUCTORS (2022)
Recent advances in optoelectronic and microelectronic devices based on ultrawide-bandgap semiconductors
Jialin Yang et al.
PROGRESS IN QUANTUM ELECTRONICS (2022)
Progress of GaN‐Based Optoelectronic Devices Integrated with Optical Resonances (Small 14/2022)
Lixia Zhao et al.
Small (2022)
Towards n-type conductivity in hexagonal boron nitride
Shiqiang Lu et al.
NATURE COMMUNICATIONS (2022)
High ambipolar mobility in cubic boron arsenide revealed by transient reflectivity microscopy
Shuai Yue et al.
SCIENCE (2022)
Silicon carbide for integrated photonics
Ailun Yi et al.
APPLIED PHYSICS REVIEWS (2022)
First-principles characterization of the electronic properties of h-BN layers
U. Paliwal et al.
MATERIALS TODAY-PROCEEDINGS (2022)
Ultrahigh carrier mobility of penta-graphene: A first-principle study
Jyotirmoy Deb et al.
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES (2021)
Wide-bandgap semiconductor microtubular homojunction photodiode for high-performance UV detection
Qiang Wang et al.
JOURNAL OF ALLOYS AND COMPOUNDS (2021)
Four-dimensional vibrational spectroscopy for nanoscale mapping of phonon dispersion in BN nanotubes
Ruishi Qi et al.
NATURE COMMUNICATIONS (2021)
Hexagonal boron nitride: Epitaxial growth and device applications
A. Maity et al.
PROGRESS IN QUANTUM ELECTRONICS (2021)
Toward Unusual-High Hole Mobility of p-Channel Field-Effect-Transistors
Jiamin Sun et al.
SMALL (2021)
First-principles study of electronic transport in germanane and hexagonal boron nitride
Mohammad Mahdi Khatami et al.
PHYSICAL REVIEW B (2021)
Group-IV(A) Janus dichalcogenide monolayers and their interfaces straddle gigantic shear and in-plane piezoelectricity
Pradip Nandi et al.
NANOSCALE (2021)
Ab initio dielectric response function of diamond and other relevant high pressure phases of carbon
Kushal Ramakrishna et al.
JOURNAL OF PHYSICS-CONDENSED MATTER (2020)
ZrS3/MS2 and ZrS3/MXY (M=Mo, W; X, Y=S, Se, Te; X ≠ Y) type-II van der Waals hetero-bilayers: Prospective candidates in 2D excitonic solar cells
Raihan Ahammed et al.
APPLIED SURFACE SCIENCE (2020)
Optoelectronic Properties of Monolayer Hexagonal Boron Nitride on Different Substrates Measured by Terahertz Time-Domain Spectroscopy
Muhammad Bilal et al.
NANOMATERIALS (2020)
Pentagraphyne: a new carbon allotrope with superior electronic and optical property
Jyotirmoy Deb et al.
JOURNAL OF MATERIALS CHEMISTRY C (2020)
Interfacial hybridization of Janus MoSSe and BX (X = P, As) monolayers for ultrathin excitonic solar cells, nanopiezotronics and low-power memory devices
Manish Kumar Mohanta et al.
NANOSCALE (2020)
Thermal conductivity of monolayer hexagonal boron nitride: From defective to amorphous
Xin Wu et al.
COMPUTATIONAL MATERIALS SCIENCE (2020)
Modulation of electronic and transport properties of bilayer heterostructures: InSe/MoS2 and InSe/h-BN as the prototype
Raja Sen et al.
PHYSICAL REVIEW B (2020)
Direct band-gap crossover in epitaxial monolayer boron nitride
C. Elias et al.
NATURE COMMUNICATIONS (2019)
High thermal conductivity of high-quality monolayer boron nitride and its thermal expansion
Qiran Cai et al.
SCIENCE ADVANCES (2019)
Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges
J. Y. Tsao et al.
ADVANCED ELECTRONIC MATERIALS (2018)
Insulator-semimetallic transition in quasi-1D charged impurity-infected armchair boron-nitride nanoribbons
Bui Dinh Hoi et al.
PHYSICS LETTERS A (2018)
A comprehensive study on carrier mobility and artificial photosynthetic properties in group VI B transition metal dichalcogenide monolayers
Ashima Rawat et al.
JOURNAL OF MATERIALS CHEMISTRY A (2018)
Uncovering a Stable Phase in Group V Transition-metal Dinitride (MN2, M = Ta, Nb, V) Nanosheets and Their Electronic Properties via First-principles Investigations
Yanli Wang et al.
JOURNAL OF PHYSICAL CHEMISTRY C (2018)
Monolayer to Bulk Properties of Hexagonal Boron Nitride
Darshana Wickramaratne et al.
JOURNAL OF PHYSICAL CHEMISTRY C (2018)
Emergence of high piezoelectricity along with robust electron mobility in Janus structures in semiconducting Group IVB dichalcogenide monolayers
Dimple et al.
JOURNAL OF MATERIALS CHEMISTRY A (2018)
Two dimensional hexagonal boron nitride (2D-hBN): synthesis, properties and applications
Kailiang Zhang et al.
JOURNAL OF MATERIALS CHEMISTRY C (2017)
Widely tunable and anisotropic charge carrier mobility in monolayer tin(II) selenide using biaxial strain: a first-principles study
Mei Zhou et al.
JOURNAL OF MATERIALS CHEMISTRY C (2017)
Electronic and Optoelectronic Applications Based on 2D Novel Anisotropic Transition Metal Dichalcogenides
Chuanhui Gong et al.
ADVANCED SCIENCE (2017)
Mechanical characterization and cleaning of CVD single-layer h-BN resonators
Santiago J. Cartamil-Bueno et al.
NPJ 2D MATERIALS AND APPLICATIONS (2017)
First-Principles Prediction of the Electronic Structure and Carrier Mobility in Hexagonal Boron Phosphide Sheet and Nanoribbons
Bowen Zeng et al.
JOURNAL OF PHYSICAL CHEMISTRY C (2016)
Directional anisotropy, finite size effect and elastic properties of hexagonal boron nitride
Siby Thomas et al.
JOURNAL OF PHYSICS-CONDENSED MATTER (2016)
Two-dimensional BX (X = P, As, Sb) semiconductors with mobilities approaching graphene
Meiqiu Xie et al.
NANOSCALE (2016)
Hexagonal boron nitride is an indirect bandgap semiconductor
G. Cassabois et al.
NATURE PHOTONICS (2016)
2D materials and van der Waals heterostructures
K. S. Novoselov et al.
SCIENCE (2016)
Energetics and Electronic Structure of h-BN Nanoflakes
Ayaka Yamanaka et al.
SCIENTIFIC REPORTS (2016)
Absolute deformation potentials of two-dimensional materials
Julia Wiktor et al.
PHYSICAL REVIEW B (2016)
Mobility anisotropy of two-dimensional semiconductors
Haifeng Lang et al.
PHYSICAL REVIEW B (2016)
Air-Stable Transport in Graphene-Contacted, Fully Encapsulated Ultrathin Black Phosphorus-Based Field-Effect Transistors
Ahmet Avsar et al.
ACS NANO (2015)
Electronic transport properties of transition metal dichalcogenide field-effect devices: surface and interface effects
Hennrik Schmidt et al.
CHEMICAL SOCIETY REVIEWS (2015)
Wide-bandgap semiconductor materials: For their full bloom
Shizuo Fujita
JAPANESE JOURNAL OF APPLIED PHYSICS (2015)
Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility
Han Liu et al.
ACS NANO (2014)
Polarity-Reversed Robust Carrier Mobility in Monolayer MoS2 Nanoribbons
Yongqing Cai et al.
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY (2014)
Tuning the electron transport properties of boron-nitride nanoribbons with electron and hole doping
L. L. Song et al.
RSC ADVANCES (2014)
Charge carrier transport properties in layer structured hexagonal boron nitride
T. C. Doan et al.
AIP ADVANCES (2014)
Inverse relationship between carrier mobility and bandgap in graphene
Jinying Wang et al.
JOURNAL OF CHEMICAL PHYSICS (2013)
Mobility engineering and a metal-insulator transition in monolayer MoS2
Branimir Radisavljevic et al.
NATURE MATERIALS (2013)
Widely Tunable Carrier Mobility of Boron Nitride-Embedded Graphene
Jinying Wang et al.
SMALL (2013)
Channel Length Scaling of MoS2 MOSFETs
Han Liu et al.
ACS NANO (2012)
First-principles prediction of charge mobility in carbon and organic nanomaterials
Jinyang Xi et al.
NANOSCALE (2012)
Crystal structures and band gap characters of h-BN polytypes predicted by the dispersion corrected DFT and GW method
Shang-Peng Gao
SOLID STATE COMMUNICATIONS (2012)
Ab-initio simulations of deformation potentials and electron mobility in chemically modified graphene and two-dimensional hexagonal boron-nitride
Samantha Bruzzone et al.
APPLIED PHYSICS LETTERS (2011)
Edge Stabilities of Hexagonal Boron Nitride Nanoribbons: A First-Principles Study
Rajdip Mukherjee et al.
JOURNAL OF CHEMICAL THEORY AND COMPUTATION (2011)
Half-Metallic Dirac Point in B-Edge Hydrogenated BN Nanoribbons
Erjun Kan et al.
JOURNAL OF PHYSICAL CHEMISTRY C (2011)
Boron Nitride Nanoribbons Become Metallic
Alejandro Lopez-Bezanilla et al.
NANO LETTERS (2011)
Longitudinal Splitting of Boron Nitride Nanotubes for the Facile Synthesis of High Quality Boron Nitride Nanoribbons
Kris J. Erickson et al.
NANO LETTERS (2011)
BN White Graphene with Colorful Edges: The Energies and Morphology
Yuanyue Liu et al.
NANO LETTERS (2011)
Single-layer MoS2 transistors
B. Radisavljevic et al.
NATURE NANOTECHNOLOGY (2011)
Coupling of excitons and defect states in boron-nitride nanostructures
C. Attaccalite et al.
PHYSICAL REVIEW B (2011)
White Graphenes: Boron Nitride Nanoribbons via Boron Nitride Nanotube Unwrapping
Haibo Zeng et al.
NANO LETTERS (2010)
High Yield Preparation of Macroscopic Graphene Oxide Membranes
Zhengtang Luo et al.
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY (2009)
Theoretical Predictions of Size-Dependent Carrier Mobility and Polarity in Graphene
Meng-Qiu Long et al.
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY (2009)
Operation of Graphene Transistors at Gigahertz Frequencies
Yu-Ming Lin et al.
NANO LETTERS (2009)
First-principles study of two- and one-dimensional honeycomb structures of boron nitride
M. Topsakal et al.
PHYSICAL REVIEW B (2009)
Solution-Gated Epitaxial Graphene as pH Sensor
Priscilla Kailian Ang et al.
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY (2008)
Approaching ballistic transport in suspended graphene
Xu Du et al.
NATURE NANOTECHNOLOGY (2008)
Half metallicity along the edge of zigzag boron nitride nanoribbons
Fawei Zheng et al.
PHYSICAL REVIEW B (2008)
Measurement of scattering rate and minimum conductivity in graphene
Y. -W. Tan et al.
PHYSICAL REVIEW LETTERS (2007)
Energy band-gap engineering of graphene nanoribbons
Melinda Y. Han et al.
PHYSICAL REVIEW LETTERS (2007)
Intrinsic current-voltage characteristics of graphene nanoribbon transistors and effect of edge doping
Qimin Yan et al.
NANO LETTERS (2007)
Energy gaps in graphene nanoribbons
Young-Woo Son et al.
PHYSICAL REVIEW LETTERS (2006)
Electronic confinement and coherence in patterned epitaxial graphene
Claire Berger et al.
SCIENCE (2006)
Self-vacancies in gallium arsenide:: An ab initio calculation -: art. no. 125207
F El-Mellouhi et al.
PHYSICAL REVIEW B (2005)
Direct-bandgap properties and evidence for ultraviolet lasing of hexagonal boron nitride single crystal
K Watanabe et al.
NATURE MATERIALS (2004)