Journal
CERAMICS INTERNATIONAL
Volume 41, Issue 1, Pages 1641-1645Publisher
ELSEVIER SCI LTD
DOI: 10.1016/j.ceramint.2014.09.102
Keywords
Electronic structure; Al-doped ZnO; Al doping concentration; Conducting mechanism
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Funding
- Basic Science Research Program through the National Research Foundation of Korea (NRF) - Ministry of Education, Science and Technology [NRF-2013R1A1A2A10005186]
- Korea Research Council for Industrial Science and Technology as part of the project Mass-Production Technology Support Center for Green Energy Devices
- National Research Foundation of Korea [22A20130000037] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Transparent conducting Al-doped ZnO films were deposited by atomic layer deposition with various of Al doping concentrations. In order to explain the change in resistivity of Al-doped ZnO films depending on Al doping concentration, we investigated the correlations between the conducting property and electronic structure in terms of atomic configuration, the evolution of the conduction band and band gap, and band alignments (conduction band offset between minimum of conduction band and Fermi level, Delta E-CB). ZnO film Al-doped at similar to 3 at% and deposited at 250 degrees C showed the lowest resistivity, which resulted in changes in the conduction band of insulating Al2O3 film, and increases in the band gap and conduction band offset (Delta E-CB). (C) 2014 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
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