A potential red-light-emitting Pr3+-doped novel silicate phosphors: Judd-Ofelt analysis and photoluminescence properties

A simple and highly efficient method of the solid-state reaction method was used to synthesize a new series of red-light-emitting KBaScSi3O9:xPr (KBSxPr) silicate phosphors. The resultant XRD pattern would have belonged to the monoclinic crystal system with the space group P21/n. Absorption spectra were also used to compute the nephelauxetic ratio and the bonding parameter. Its direct bandgap values were obtained by Tauc's plots. Judd-Ofelt theory was used to derive the phosphor's radiative parameters by estimating the Omega(2), Omega(4), and Omega(6) parameters from the absorption spectra. The emission spectra of KBSxPr phosphors show an intense emission peak at 645 nm owing to P-3(0) -> F-3(2) transition. The CIE diagram was used to determine chromaticity coordinates from the luminescence spectra, which were placed in the red zone. The radiative parameter like branching ratios, stimulated emission cross section, transition probability, and radiative lifetime were computed using refractive index and J-O parameters. The decay lifetime is also calculated for all the title phosphors by observing the emission at 645 nm. Based on these findings, it was noted that the KBS0.05Pr phosphor could be used as a red-emitting phosphor for light-emitting devices.

Automated summary

A new series of red-light-emitting KBaScSi3O9:xPr (KBSxPr) silicate phosphors were synthesized using a simple and efficient solid-state reaction method. The XRD pattern of the resulting phosphors indicated a monoclinic crystal system with the space group P21/n. The absorption spectra were used to calculate the nephelauxetic ratio and the bonding parameter, and the direct bandgap values were obtained through Tauc's plots. The radiative parameters of the phosphors were derived using Judd-Ofelt theory, and the emission spectra showed a strong peak at 645 nm. The KBS0.05Pr phosphor was found to be a suitable red-emitting material for light-emitting devices based on its characteristics and performance.