Effect of interfacial disordered spins on the magnetism of Co/Si multilayers

The influence of the Si spacer layer on the structural and magnetic properties of Co/Si multilayers is studied. The role of disordered surface spins at the interface of the multilayers is also studied. This study is performed by characterizing a series of samples [Co(50 angstrom)/Si(t(Si)angstrom)](20) prepared by DC magnetron sputtering. Structural and microstructural studies suggest that the crystallite size is increased with decrease in the Si layer thickness. The magnetization increases and tends to the bulk value of Co while decreasing the thickness of the Si layers. Effect of interfacial disordered spins changes the shape of the hysteresis loop observed in the low field regime. The disordered surface spins lead to the rise of a crossed magnetic hysteresis loop of the multilayers.

Automated summary

The influence of Si spacer layer on the structural and magnetic properties of Co/Si multilayers was studied, as well as the role of disordered surface spins at the interface of the multilayers. A series of samples [Co(50 angstrom)/Si(t(Si) angstrom)](20) prepared by DC magnetron sputtering were characterized, and structural and microstructural studies indicated that the crystallite size increased with decrease in the Si layer thickness. The magnetization increased and tended to the bulk value of Co while the thickness of the Si layers decreased. The effect of interfacial disordered spins changed the shape of the hysteresis loop observed in the low field regime, leading to the rise of a crossed magnetic hysteresis loop of the multilayers.