☆ 4.6 Article

Polarization-field tuning and stable performance of the resistance switching in a ferroelectric/amorphous PbZr0.2Ti0.8O3/La2Zr2O7 heterostructure

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS (2023)

Related references

Note: Only part of the references are listed.

Article Chemistry, Physical

Understanding and modulation of resistive switching behaviors in PbZr0.52Ti0.48O3/La0.67Sr0.33MnO3/Nb:SrTiO3 multilayer junctions

Hang Yu Zheng et al.

Summary: The ferroelectric properties and resistive switching behaviors of PZT/LSMO/NSTO heterostructures with different LSMO thicknesses were investigated. It was found that the ferroelectric properties were almost unaffected by the LSMO thickness, while the resistive switching behaviors were closely related to the LSMO thickness, with the maximum switching ratio occurring in the structure with LSMO thickness of 18 nm. Analysis of the energy band structures and I-V curves revealed that the resistive switching behaviors depended on the competition between the tunability of the depletion layer width and the ability of ferroelectric field effect.

APPLIED SURFACE SCIENCE (2022)

Add to Collection

Article Materials Science, Ceramics

Self-rectifying and forming-free resistive switching behaviors in Pt/ La2Ti2O7/Pt structure

Yibo Deng et al.

Summary: In this work, the resistive switching behavior of an amorphous La2Ti2O7 film sandwiched between two Pt electrodes is reported. The resistive switching is forming-free and highly uniform. The mechanism of switching behavior is attributed to trapping/detrapping-mediated electronic bipolar resistance switching.

CERAMICS INTERNATIONAL (2022)

Add to Collection

Article Nanoscience & Nanotechnology

Coupled Current Jumps and Domain Wall Creeps in a Defect-Engineered Ferroelectric Resistive Memory

Biaohong Huang et al.

Summary: By judiciously controlling the defect states of oxygen vacancy through Sm-doping, multiple current jumps and discrete resistance states can be obtained in ferroelectric resistive switching memories. Oxygen vacancies play a critical role in electron trapping and as pinning centers for ferroelectric domains, leading to domain wall creep behavior.

ADVANCED ELECTRONIC MATERIALS (2022)

Add to Collection

Article Chemistry, Physical

Resistive switching characteristics of sol-gel derived La2Zr2O7 thin film for RRAM applications

Hsiao-Ting Tseng et al.

Summary: Amorphous La2Zr2O7 thin films were prepared using the sol-gel method, and the bipolar resistive switching behavior of metal/LZO/ITO devices was systematically investigated. The film thickness, top electrodes, and post-annealing treatment conditions were found to affect the resistive switching characteristics. Thicker films resulted in higher operation voltage and fewer switching cycles, while post-annealing treatment improved the performance by forming a thicker interface layer between the metal and LZO films.

JOURNAL OF ALLOYS AND COMPOUNDS (2022)

Add to Collection

Article Chemistry, Physical

Resistive switching properties of amorphous Sm2Ti2O7 thin film prepared by RF sputtering for RRAM applications

Yu-Ta Chen et al.

Summary: The resistive switching characteristics of amorphous Sm2Ti2O7 thin films prepared by RF sputtering and the effect of post-metallization annealing (PMA) were investigated. The results showed that PMA treatment improved the resistive switching properties by forming an AlOx interface layer. The study provides potential applications for non-volatile memory.

JOURNAL OF ALLOYS AND COMPOUNDS (2022)

Add to Collection

Article Multidisciplinary Sciences

Low-voltage ultrafast nonvolatile memory via direct charge injection through a threshold resistive-switching layer

Yuan Li et al.

Summary: The use of graphdiyne oxide as a threshold switching layer in a floating gate memory enables ultrafast operation and low energy consumption.

NATURE COMMUNICATIONS (2022)

Add to Collection

Article Chemistry, Multidisciplinary

Tunable Volatile to Non-Volatile Resistive Switching in PbZrO3 Antiferroelectric Thin Film for Neuromorphic Computing

Zonglin Lv et al.

Summary: The direct coupling of antiferroelectric and resistive switching has been achieved for the first time, allowing the resistance of the heterostructure to switch between volatile and non-volatile behavior. The study also explores synaptic behaviors in the film, opening up potential applications in neural computing.

ADVANCED MATERIALS INTERFACES (2022)

Add to Collection

Article Physics, Applied

Schottky-to-Ohmic switching in ferroelectric memristors based on semiconducting Hf0.93Y0.07O2 thin films

Moritz L. Muller et al.

Summary: We demonstrate resistive switching and memristive behavior in devices consisting of ultrathin semiconducting ferroelectric films. The semiconducting nature of the films results in different current-voltage characteristics compared to tunnel junctions utilizing ultrathin insulating ferroelectric films. The devices show a polarization-modulated transition from Schottky-barrier-controlled charge transport to Ohmic conduction, leading to a high on/off ratio. Additionally, voltage pulse train measurements reveal a broad range of accessible resistance states, indicating the memristive behavior of the devices. These results are an important step towards the development of future nonvolatile memory and brain-inspired neuromorphic computing applications based on ultrathin semiconducting ferroelectric films.

APPLIED PHYSICS LETTERS (2022)

Add to Collection

Article Engineering, Electrical & Electronic

Extraction of Dynamic Threshold Voltage in Resistive Load Hard Switching Operation of Schottky-Type p-GaN Gate HEMT

Injun Hwang et al.

Summary: This study analyzes the threshold voltage drift of p-GaN gate high-electron mobility transistor (HEMT) under high-voltage and hard switching conditions. A method is proposed to accurately measure the dynamic threshold voltage by correcting the charging current of the internal drain capacitance. The experimental results show that the dynamic threshold voltage rapidly increases and saturates during the switching operation, and it has a linear relationship with the gate turn-on voltage.

IEEE ELECTRON DEVICE LETTERS (2022)

Add to Collection

Article Materials Science, Multidisciplinary

Synthesis of hexagonal boron nitride thin film on Pt substrates for resistive switching memory applications

Yue Jiang et al.

Summary: This research reports the construction of RS memory using hBN films. The memory exhibits low operating voltage, reproducible write cycles, and long retention time, which are further confirmed by first-principles simulations. This work provides an important case for the future applications of 2D materials in RS memory.

CURRENT APPLIED PHYSICS (2022)

Add to Collection

Article Energy & Fuels

Effect of Aged Nonlinear Resistive Field Grading Material on Electric Field Distribution of DC Cone Spacer

Yongsen Han et al.

Summary: This study investigated the effects of thermal aging on nonlinear resistive field grading materials and the electric field distribution of DC cone spacers. It was found that with increasing thermal aging time, the dielectric properties of the materials would increase, breakdown strength would decrease, and the switching electric field of nonlinear conductivity would decrease.

ENERGIES (2022)

Add to Collection

Article Physics, Applied

Tailoring large magnetoresistance in Dirac semimetal SrIrO3 films

Z. Y. Ren et al.

Summary: The Perovskite SrIrO3 exhibits significant magnetoresistance effects, with both the SrIrO3 and SrIrO3/PbZr0.2Ti0.8O3 heterostructure showing large magnetoresistance under external magnetic and electric fields. The observation of negative magnetoresistance and oscillations in the bilayer structure suggests the presence of chiral anomaly originating from the Dirac/Weyl state. Additionally, the polarization field of PbZr0.2Ti0.8O3 can modulate the band structure of SrIrO3, hence modifying its magnetoresistance properties.

APPLIED PHYSICS LETTERS (2021)

Add to Collection

Article Physics, Condensed Matter

Variations in the thermal conductivity of La2Zr2O7 and Gd2Zr2O7 with variable La/Gd concentrations

Hamid Khan et al.

Summary: The phonon density of states and thermal conductivity of La2Zr2O7 and Gd2Zr2O7 were tuned to improve thermal insulation properties. Simulation based on density functional theory showed that doping Gd in La2Zr2O7 can modify the band structure and introduce Gd d states into the band gap, leading to changes in the phonon density of states curves. Among the simulated models, the system with a Gd/La ratio of 0.454 provided the minimum thermal conductivity.

PHYSICA B-CONDENSED MATTER (2021)

Add to Collection

Article Materials Science, Ceramics

Evaluating gallium-doped ZnO top electrode thickness for achieving a good switch-ability in ZnO2/ZnO bilayer transparent valence change memory

Firman Mangasa Simanjuntak et al.

Summary: The thickness of the GZO top electrode affects the resistive switching characteristic of the device, with thicker GZO layers leading to higher leakage current and requiring higher current compliance.

JOURNAL OF ELECTROCERAMICS (2021)

Add to Collection

Review Chemistry, Physical

A Review of Resistive Switching Devices: Performance Improvement, Characterization, and Applications

Tuo Shi et al.

Summary: Resistive switching devices are emerging devices with advantages of simple structure, low power consumption, high speed, and good scalability, primarily attributed to the formation of conductive filaments. Integration in a crossbar structure allows for further exploration of various applications.

SMALL STRUCTURES (2021)

Add to Collection

Article Materials Science, Ceramics

On comparison of luminescence properties of La2Zr2O7 and La2Hf2O7 nanoparticles

Santosh K. Gupta et al.

JOURNAL OF THE AMERICAN CERAMIC SOCIETY (2020)

Add to Collection

Article Physics, Multidisciplinary

Improved Resistive Memory Switching of NiOx/MnOx Double Stack

Min Kyu Yang

JOURNAL OF THE KOREAN PHYSICAL SOCIETY (2020)

Add to Collection

Article Physics, Condensed Matter

Resistive switching in multiferroic BiFeO3 films: Ferroelectricity versus vacancy migration

Alexander Cardona Rodriguez et al.

SOLID STATE COMMUNICATIONS (2019)

Add to Collection

Article Chemistry, Physical

Synaptic plasticity of room-temperature fabricated amorphous MoOx film based memristor

Qiang Xue et al.

APPLIED SURFACE SCIENCE (2019)

Add to Collection

Article Engineering, Electrical & Electronic

Noise Extraction and Model Simulation of Deep Submicron Metal-Oxide Semiconductor Devices

Hongsuo Zhou et al.

JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS (2019)

Add to Collection

Article Nanoscience & Nanotechnology

Recommended Methods to Study Resistive Switching Devices

Mario Lanza et al.

ADVANCED ELECTRONIC MATERIALS (2019)

Add to Collection

Article Nanoscience & Nanotechnology

Hysteretic Characteristics of Pulsed Laser Deposited 0.5Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3/ZnO Bilayers

J. P. B. Silva et al.

ACS APPLIED MATERIALS & INTERFACES (2018)

Add to Collection

Article Nanoscience & Nanotechnology

Nondestructive Readout Complementary Resistive Switches Based on Ferroelectric Tunnel Junctions

Zhongnan Xi et al.

ACS APPLIED MATERIALS & INTERFACES (2018)

Add to Collection

Article Chemistry, Physical

High resistance ratio of bipolar resistive switching in a multiferroic/high-K Bi(Fe0.95Cr0.05)O3/ZrO2/Pt heterostructure

B. W. Dong et al.

APPLIED SURFACE SCIENCE (2018)

Add to Collection

Article Nanoscience & Nanotechnology

Ferroelectric Field Effect Induced Asymmetric Resistive Switching Effect in BaTiO3/Nb:SrTiO3 Epitaxial Heterojunctions

Caihong Jia et al.

NANOSCALE RESEARCH LETTERS (2018)

Add to Collection

Article Engineering, Electrical & Electronic

Comparisons of switching characteristics between Ti/Al2O3/Pt and TiN/Al2O3/Pt RRAM devices with various compliance currents

Yanfei Qi et al.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2018)

Add to Collection

Article Nanoscience & Nanotechnology

Ferroelectric Field Effect Induced Asymmetric Resistive Switching Effect in BaTiO3/Nb:SrTiO3 Epitaxial Heterojunctions

Caihong Jia et al.

NANOSCALE RESEARCH LETTERS (2018)

Add to Collection

Article Materials Science, Ceramics

Resistive switching characteristics of AgInZnS nanoparticles

Dan Zhou et al.

CERAMICS INTERNATIONAL (2018)

Add to Collection

Article Physics, Multidisciplinary

Influneces of different oxygen partial pressures on switching properties of Ni/HfOx/TiN resistive switching devices

Zhang Zhi-Chao et al.

ACTA PHYSICA SINICA (2018)

Add to Collection

Article Chemistry, Multidisciplinary

Distinguishing Oxygen Vacancy Electromigration and Conductive Filament Formation in TiO2 Resistance Switching Using Liquid Electrolyte Contacts

Kechao Tang et al.

NANO LETTERS (2017)

Add to Collection

Article Multidisciplinary Sciences

Enhanced resistive switching characteristics in Pt/BaTiO3/ITO structures through insertion of HfO2:Al2O3 (HAO) dielectric thin layer

J. P. B. Silva et al.

SCIENTIFIC REPORTS (2017)

Add to Collection

Article Chemistry, Physical

Bipolar resistive switching in Si/Ag nanostructures

C. Dias et al.

APPLIED SURFACE SCIENCE (2017)

Add to Collection

Article Chemistry, Multidisciplinary

Multi-Nonvolatile State Resistive Switching Arising from Ferroelectricity and Oxygen Vacancy Migration

Weiming Lu et al.

ADVANCED MATERIALS (2017)

Add to Collection

Article Chemistry, Physical

Unraveling the resistive switching effect in ZnO/0.5Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3 heterostructures

J. P. B. Silva et al.

APPLIED SURFACE SCIENCE (2017)

Add to Collection

Article Chemistry, Physical

Tuning the resistive switching memory in a metal-ferroelectric-semiconductor capacitor by field effect structure

S. Y. Wang et al.

APPLIED SURFACE SCIENCE (2015)

Add to Collection

Article Chemistry, Physical

Nonvolatile unipolar resistive switching behavior of amorphous BiFeO3 films

Haoliang Deng et al.

JOURNAL OF ALLOYS AND COMPOUNDS (2015)

Add to Collection

Review Physics, Applied

Resistive switching phenomena: A review of statistical physics approaches

Jae Sung Lee et al.

APPLIED PHYSICS REVIEWS (2015)

Add to Collection

Article Physics, Applied

Carrier type dependence on spatial asymmetry of unipolar resistive switching of metal oxides

Kazuki Nagashima et al.

APPLIED PHYSICS LETTERS (2013)

Add to Collection

Article Physics, Applied

Semiconductor layer thickness impact on optical and resistive switching behavior of pulsed laser deposited BaTiO3/ZnO heterostructures

K. C. Sekhar et al.

APPLIED PHYSICS LETTERS (2013)

Add to Collection

Article Materials Science, Multidisciplinary

Influence of oxygen vacancy on resistive switching property of Ag/Nb:SrTiO3/Ti structure

J. X. Shen et al.

MATERIALS TECHNOLOGY (2013)

Add to Collection

Article Materials Science, Multidisciplinary

Resistive switching characteristics of a Pt nanoparticle-embedded SiO2-based memory

Chih-Yi Liu et al.

THIN SOLID FILMS (2013)

Add to Collection

Article Physics, Applied

Repeatable unipolar/bipolar resistive memory characteristics and switching mechanism using a Cu nanofilament in a GeOx film

S. Z. Rahaman et al.

APPLIED PHYSICS LETTERS (2012)

Add to Collection

Article Chemistry, Multidisciplinary

Formation and Rupture of Ag Conductive Bridge in ZrO2-Based Resistive Switching Memory

Chun-Chieh Lin et al.

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY (2012)

Add to Collection

Article Engineering, Electrical & Electronic

Filamentary resistive switching in amorphous and polycrystalline Nb2O5 thin films

H. Maehne et al.

SOLID-STATE ELECTRONICS (2012)

Add to Collection

Article Nanoscience & Nanotechnology

Diode-less bilayer oxide (WOx-NbOx) device for cross-point resistive memory applications

Xinjun Liu et al.

NANOTECHNOLOGY (2011)

Add to Collection

Article Chemistry, Multidisciplinary

Conjugated-Polymer-Functionalized Graphene Oxide: Synthesis and Nonvolatile Rewritable Memory Effect

Xiao-Dong Zhuang et al.

ADVANCED MATERIALS (2010)

Add to Collection

Review Chemistry, Multidisciplinary

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

Rainer Waser et al.

ADVANCED MATERIALS (2009)

Add to Collection

Article Physics, Applied

Chromium doping of epitaxial PbZr0.2Ti0.8O3 thin films

L. Feigl et al.

JOURNAL OF APPLIED PHYSICS (2009)

Add to Collection

Article Electrochemistry

Electrical properties and fatigue behaviors of ZrO2 resistive switching thin films

Chih-Yang Lin et al.

JOURNAL OF THE ELECTROCHEMICAL SOCIETY (2008)

Add to Collection

Review Materials Science, Multidisciplinary

Resistive switching in transition metal oxides

Akihito Sawa

MATERIALS TODAY (2008)

Add to Collection

Article Engineering, Electrical & Electronic

Bipolar and unipolar resistive switching in Cu-doped SiO2

Christina Schindler et al.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2007)

Add to Collection

Article Physics, Applied

Temperature dependence of high- and low-resistance bistable states in polycrystalline NiO films

Kyooho Jung et al.

APPLIED PHYSICS LETTERS (2007)

Add to Collection

Article Chemistry, Multidisciplinary

Intrinsic ferroelectric properties of strained tetragonal PbZr0.2Ti0.8O3 obtained on layer-by-layer grown, defect-free single-crystalline films

Ionela Vrejoiu et al.

ADVANCED MATERIALS (2006)

Add to Collection

© Peeref 2019-2024. All rights reserved.