Study of MIPs effects on a MAPS for electron ion collider in China

The Monolithic Active Pixel Sensor (MAPS) is a good candidate for the inner tracking system of the Electron-Ion Collider in China (EicC). Hence, a MAPS with a pixel pitch of similar to 30 mu m is being designed. Two 130 nm CMOS processes have been proposed as candidates for this MAPS design. The first one is a commercial standard twin-well low-resistivity (<50 Omega cm) process, and the other one is a quadruple-well high-resistivity (>1 k Omega cm) process. A 3 -dimensional TCAD model of the pixels has been established to evaluate the Minimum Ionizing Particles (MIPs) induced charge collection in these two processes. This paper will discuss the study of charge collection efficiency, charge collection time, and charge sharing among pixels.

Automated summary

This study aims to design a MAPS for the inner tracking system of EicC in China with a pixel pitch of 30 μm. Two 130 nm CMOS processes, including a low-resistivity twin-well process and a high-resistivity quadruple-well process, are proposed. A 3D TCAD model is established to evaluate the charge collection efficiency, collection time, and charge sharing among pixels caused by MIPs in these processes.