Preparation and electrical properties of (1-x)(Na0.5Bi0.5)TiO3-xBiAlO3 thin films by a sol-gel process

Lead-free solid solution ceramics (1 - x)(Na0.5Bi0.5)TiO3-xBiAlO(3)(NBT-BA) exhibited an improved ferroelectric and piezoelectric properties compared to the pure NBT ceramics. In this study, (1 - x)(Na0.5Bi0.5)TiO3-xBiAlO(3) (NBT BA) (x=0-0.07) thin films were grown on Pt/TiO2/SiO2/Si substrates via a sol-gel process. The compositional dependence and heating treatment temperature dependence of crystalline structure, morphology, and electrical properties of (1 - x)NBT-xBA thin films were discussed. We found that the (1 - x)NBT-xBA films heated at 700 degrees C exhibited improved electrical properties compared to the pure NBT thin films. For 0.97NBT-0.03BA film, a larger Pr of 16.5 mu C/cm(2) and a lower leakage current density of similar to 10(-6) A/cm(2) at 200 kV/cm were achieved, and the values of the dielectric constant and dissipation loss at 100 kHz were 385 and 0.029, respectively. (C) 2015 Elsevier Ltd and Techna Group S.r.l. All rights reserved.