Journal
JOURNAL OF ELECTRONIC MATERIALS
Volume 52, Issue 8, Pages 5134-5139Publisher
SPRINGER
DOI: 10.1007/s11664-023-10475-x
Keywords
ZnMgO; spin coating; diethylzinc; XRD; SEM; AFM
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A non-doped ZnMgO thin film was deposited on a white glass at room temperature using a diethylzinc-based solution and annealed at 150 degrees C. The film showed high optical transmittance (>85%) in the visible region, a-axis orientation hexagonal polycrystal structure, dense crystal, and flat surface. The n-type nature of the sample was confirmed by x-ray photoemission spectroscopy, with a resistivity of 14 x 10(6) Omega cm, carrier concentration of 3.9 x 10(11) cm(-3), and mobility of 5.0 cm(2) (Vs)(-1).
Non-doped ZnMgO thin film deposited at room temperature on a white glass using a diethylzinc-based solution grown by atmospheric conventional spin coating was annealed at 150 degrees C. The sample had an average optical transmittance of more than 85% in the visible region, and a-axis orientation hexagonal polycrystal, a dense crystal, and a flat surface. Moreover, the n-type sample was obtained from the predominant zinc interstitial caused by x-ray photoemission spectroscopy. A sample had a resistivity of 14 x 10(6) Omega cm, carrier concentration of 3.9 x 10(11) cm(-3), and mobility of 5.0 cm(2) (Vs)(-1). [GRAPHICS] .
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