Potential-Induced Performance Degradation (PID) Applied on a Perovskite Solar Cell: Exploring Its Effect on Cell Performance Through Numerical Simulation

Metal halide perovskites are regarded as promising photovoltaic candidates in the solar industry due to their high photon-to-current conversion efficiency, outstanding processability, chemical characteristics, and cost-effectiveness. However, their stability is a major concern for large-scale applications. Recently, potential-induced performance degradation (PID) has arisen as a prevalent risk that affects the lifetime of photovoltaics resulting from negative bias and adverse environmental conditions. Throughout this study, the influence of PID on four perovskite (MAPbI(3), CsPbI3, CsGeI3, and CsSnI3) device structures is demonstrated, and the device performance is evaluated using SCAPS-1D. Intrinsic defects of different scales in the absorber layer are incorporated to trigger the PID effect, and its impact on different PSCs is examined. Additionally, quantum efficiency and impact on band energy are also investigated. The results reveal that the CsPbI3-based solar cell has the highest defect tolerance limit of 1 x 10(17) cm(-3). The study further reveals that under PID, FTO/TiO2/CsPbI3/NiO/Au shows better stability than other structures, with power conversion efficiency of 18.13%.

Automated summary

Metal halide perovskites are highly promising for photovoltaic applications in the solar industry due to their high efficiency, processability, chemical characteristics, and cost-effectiveness. However, their stability is a major concern, and potential-induced performance degradation (PID) has emerged as a prevalent risk. This study investigates the influence of PID on different perovskite device structures and evaluates their performance. The results show that CsPbI3-based solar cells exhibit the highest defect tolerance limit and the FTO/TiO2/CsPbI3/NiO/Au structure demonstrates better stability under PID.