Cathodoluminescence Study of 3C-SiC Epilayers Grown on 4H-SiC Substrates

3C-SiC/4H-SiC heterostructures have great potential for high-electron-mobility transistors. The growth of high-quality 3C-SiC epilayers on 4H-SiC substrates can be realized by controlling step growth with proper surface pretreatment. We investigated the optical and electrical properties of extended defects in 3C-SiC by cathodoluminescence (CL) spectroscopy. CL images revealed the distribution of extended defects in 3C-SiC. The impact of surface pretreatment on the growth of high-quality 3C-SiC is discussed.

Automated summary

High-quality 3C-SiC epilayers can be grown on 4H-SiC substrates by controlling step growth and proper surface pretreatment. The optical and electrical properties of extended defects in 3C-SiC were investigated using cathodoluminescence (CL) spectroscopy. The impact of surface pretreatment on the growth of high-quality 3C-SiC is discussed.