4.4 Article

MOVPE and its future production challenges

Journal

JOURNAL OF CRYSTAL GROWTH
Volume 605, Issue -, Pages -

Publisher

ELSEVIER
DOI: 10.1016/j.jcrysgro.2022.127031

Keywords

A3; Metalorganic Vapour Phase Epitaxy; B3; Laser diodes; B2; Semiconducting III-V materials; B1; Gallium compounds; Semiconducting gallium arsenide; A1; Substrates

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III-V Compound Semiconductors, such as GaAs, InP, and GaN, are critical in supporting major technological revolutions and have high potential in the growing photonics industry. The mass-manufacturing of VCSEL-based devices, with improvements in cost-reduction and uniformity, is crucial in driving market growth in areas like 3D imaging, sensing, LIDAR applications, datacom, and industrial markets. The scalability to larger wafer diameters and in-situ process control are key challenges that need to be addressed for successful mass-production.
III-V Compound Semiconductors (CS) such as Gallium Arsenide (GaAs), Indium Phosphide (InP) and more latterly, Gallium Nitride (GaN) are critical Key Enabling Technologies, fundamentally underpinning several recent major technology revolutions. Two major current and likely-future markets within the burgeoning pho-tonics industry ($7 billion) are 3D imaging and sensing and LIDAR applications, with high predicted market growth. Datacom and industrial markets add considerable further momentum to this market growth. Evidence of such expansion is provided in the manufacturing of VCSEL-based devices, which have in recent years, entered a rapid growth phase. For the mass-manufacturing of for example, GaAs/AlGaAs-based VCSEL MOVPE epitaxy, many areas require addressing in key underlying R&D, such as cost-reduction and in thickness and wavelength uniformity. In addition, scalability, (e.g. to 150 mm wafers), automation and in-situ process control will impact yield and throughput improvements.We will demonstrate the preparations for mass-manufacturing, through improvements implemented across the evolution of the VCSEL epiwafers from smaller diameters, through 100 mm and on to 150 mm wafers. More recently however, further developments have led to even larger diameter VCSEL wafer epitaxy, on both GaAs and Ge 200 mm substrates. Challenges in growing on such large diameter wafers will be presented from the epitaxy (layer uniformity and wafer bow) and device fabrication perspective. We will demonstrate how these im-provements impact on the manufacturing readiness of production VCSEL wafers.

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