4.7 Article

In2O3:Ga and In2O3:P-based one-electrode gas sensors: Comparative study

Journal

CERAMICS INTERNATIONAL
Volume 41, Issue 6, Pages 7478-7488

Publisher

ELSEVIER SCI LTD
DOI: 10.1016/j.ceramint.2015.02.069

Keywords

Ceramics; Composite materials; Microporous materials; Interfaces; Electrical characterization

Funding

  1. National Research Foundation (NRF), South Korea - Korean Government [2011-0028736, 2013-K000315]
  2. Basic Science Research Program through the NRF - Ministry of Science, ICT and Future Planning of Korea [2012-R1A1A2041564]
  3. State Program of Republic of Moldova
  4. National Research Foundation of Korea [2011-0028736] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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Gas sensing characteristics of one-electrode sensors based on the In2O3 ceramics doped by gallium and phosphorus have been discussed. In2O3-based ceramic was prepared by sol-gel technology. Ozone, CO, CH4 and H-2 were used as tested gases. The doping concentration effect on the sensor parameters such as magnitude of response, operating temperature, response and recovery times, sensitivity to the air humidity, and selectivity have been analyzed. It was shown that In2O3 doping by Ga and P could be used for the sensor performance optimization. It was assumed that the appearance of the second phase (InPO4 and Ga2O3) and the change of structural parameters, taking place during doping process, were the main factors controlling the change of operating characteristics in In2O3:P and In2O3:Ga-based sensors. (C) 2015 Elsevier Ltd and Techna Group S.r.l. All rights reserved.

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