III-V selective regrowth on SOI for telecom lasers in silicon photonics

To realize fully integrated silicon photonics (Si photonics), reliable III-V light sources that can be efficiently coupled with Si/SiN waveguides are essential. Here, based on a monolithic InP/silicon-on-insulator (SOI) platform, we developed a selective regrowth scheme and constructed a regrowth platform for on-chip lasers that can be efficiently coupled with Si/SiN waveguides. InP and InGaAs/InP multi-quantum wells (MQWs) were regrown on the regrowth template on SOI as well as patterned commercial InP wafers in the same growth run for comparison. A flat (001) top surface after regrowth with a low roughness of 0.38 nm was obtained on SOI. Benefitting from the high quality of MQWs regrowth, strong photoluminescence emission at telecom band can be obtained on both growth templates. Also, multi-wavelength emission on the same chip can be potentially achieved by designing various regrowth openings. Furthermore, the large material volume with vertical stacking structure and intimate placement of MQWs and the Si layer of SOI allow for the potential demonstration of electrically pumped lasers and efficient light coupling between them and Si/SiN waveguides. Therefore, the demonstrated regrowth method provides a promising solution for the monolithic integration of III-V on-chip lasers on Si.

Automated summary

To achieve fully integrated silicon photonics, reliable III-V light sources that can efficiently couple with Si/SiN waveguides are crucial. A selective regrowth scheme was developed on a monolithic InP/SOI platform to construct on-chip lasers that can be efficiently coupled with Si/SiN waveguides. Strong photoluminescence emission at the telecom band was obtained on both growth templates, demonstrating the potential for multi-wavelength emission on the same chip. The regrowth method provides a promising solution for the monolithic integration of III-V on-chip lasers on Si.