Related references
Note: Only part of the references are listed.Atomic-scale investigation of implanted Mg in GaN through ultra-high-pressure annealing
Jun Uzuhashi et al.
JOURNAL OF APPLIED PHYSICS (2022)
Dopant activation process in Mg-implanted GaN studied by monoenergetic positron beam
Akira Uedono et al.
SCIENTIFIC REPORTS (2021)
Impact of high-temperature implantation of Mg ions into GaN
Masahiro Takahashi et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2020)
Defect evolution in Mg ions implanted GaN upon high temperature and ultrahigh N2 partial pressure annealing: Transmission electron microscopy analysis
Kenji Iwata et al.
JOURNAL OF APPLIED PHYSICS (2020)
Mg diffusion and activation along threading dislocations in GaN
Wei Yi et al.
APPLIED PHYSICS LETTERS (2020)
Influence of implanted Mg concentration on defects and Mg distribution in GaN
Ashutosh Kumar et al.
JOURNAL OF APPLIED PHYSICS (2020)
Cathodoluminescene study of Mg implanted GaN: the impact of dislocation on Mg diffusion
Jun Chen et al.
APPLIED PHYSICS EXPRESS (2019)
Annealing Behavior of Vacancy-Type Defects in Mg- and H-Implanted GaN Studied Using Monoenergetic Positron Beams
Akira Uedono et al.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS (2019)
Magnesium ion-implantation-based gallium nitride p-i-n photodiode for visible-blind ultraviolet detection
Weizong Xu et al.
PHOTONICS RESEARCH (2019)
Atomic-scale quantitative analysis of implanted Mg in annealed GaN layers on free-standing GaN substrates
Ashutosh Kumar et al.
JOURNAL OF APPLIED PHYSICS (2019)
Cathodoluminescence Study on Thermal Recovery Process of Mg-Ion Implanted N-Polar GaN
Keita Kataoka et al.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS (2018)
Carrier Trapping by Vacancy-Type Defects in Mg-Implanted GaN Studied Using Monoenergetic Positron Beams
Akira Uedono et al.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS (2018)
Electrically active point defects in Mg implanted n-type GaN grown by metal-organic chemical vapor deposition
G. Alfieri et al.
JOURNAL OF APPLIED PHYSICS (2018)
The 2018 GaN power electronics roadmap
H. Amano et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2018)
Room-temperature photoluminescence lifetime for the near-band-edge emission of (000<(1))over bar> p-type GaN fabricated by sequential ion-implantation of Mg and H
K. Shima et al.
APPLIED PHYSICS LETTERS (2018)
Wide range doping control and defect characterization of GaN layers with various Mg concentrations
Tetsuo Narita et al.
JOURNAL OF APPLIED PHYSICS (2018)
Comparative Analysis of Defects in Mg-Implanted and Mg-Doped GaN Layers on Freestanding GaN Substrates
Ashutosh Kumar et al.
NANOSCALE RESEARCH LETTERS (2018)
Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation
Yuhao Zhang et al.
IEEE ELECTRON DEVICE LETTERS (2017)
Hall-effect measurements of metalorganic vapor-phase epitaxy-grown p-type homoepitaxial GaN layers with various Mg concentrations
Masahiro Horita et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2017)
Lattice Location of Mg in GaN: A Fresh Look at Doping Limitations
U. Wahl et al.
PHYSICAL REVIEW LETTERS (2017)
Nitrogen vacancies as a common element of the green luminescence and nonradiative recombination centers in Mg-implanted GaN layers formed on a GaN substrate
Kazunobu Kojima et al.
APPLIED PHYSICS EXPRESS (2017)
GaN Technology for Power Electronic Applications: A Review
Tyler J. Flack et al.
JOURNAL OF ELECTRONIC MATERIALS (2016)
Analysis of compositional uniformity in AlxGa1-xN thin films using atom probe tomography and electron microscopy
Fang Liu et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (2016)
Microstructure study of a severely plastically deformed Mg-Zn-Y alloy by application of low angle annular dark field diffraction contrast imaging
Dudekula Althaf Basha et al.
SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS (2016)
KOH based selective wet chemical etching of AlN, AlxGa1-xN, and GaN crystals: A way towards substrate removal in deep ultraviolet-light emitting diode
W. Guo et al.
APPLIED PHYSICS LETTERS (2015)
Indium clustering in a-plane InGaN quantum wells as evidenced by atom probe tomography
Fengzai Tang et al.
APPLIED PHYSICS LETTERS (2015)
Atom probe tomography study of Mg-doped GaN layers
S. Khromov et al.
NANOTECHNOLOGY (2014)
Three-Dimensional Mapping of Quantum Wells in a GaN/InGaN Core-Shell Nanowire Light-Emitting Diode Array
James R. Riley et al.
NANO LETTERS (2013)
GaN based nanorods for solid state lighting
Shunfeng Li et al.
JOURNAL OF APPLIED PHYSICS (2012)
Atomic-resolution defect contrast in low angle annular dark-field STEM
P. J. Phillips et al.
ULTRAMICROSCOPY (2012)
Atomic-scale imaging of nanoengineered oxygen vacancy profiles in SrTiO3
DA Muller et al.
NATURE (2004)
Atomic structure of pyramidal defects in Mg-doped GaN
P Vennegues et al.
PHYSICAL REVIEW B (2003)
Heavy doping effects in Mg-doped GaN
P Kozodoy et al.
JOURNAL OF APPLIED PHYSICS (2000)