Impact of high-temperature Mg-implantation on defects and dopants distribution in GaN

We have investigated the impact of high-temperature Mg-implantation in GaN layers on distribution of Mg-enriched defects using scanning transmission electron microscopy and atom probe tomography. For this, 1 x 10(19) cm(-3) Mg ions have been implanted in GaN layers at room temperature (RT) and 1000 ?, followed by annealing at 1300 ?. A smaller number of Mg-enriched defects were observed in the sample implanted at 1000 ? in comparison to the sample implanted at RT. The implantation of Mg ions at 1000 ? resulted in a higher amount of randomly distributed Mg in the GaN matrix, which, in turn, leads to more uniform and enhanced donor-acceptor pair emission, leading to higher Mg activation.

Automated summary

We investigated the impact of high-temperature Mg-implantation on the distribution of Mg-enriched defects in GaN layers. By using scanning transmission electron microscopy and atom probe tomography, we observed fewer Mg-enriched defects in the sample implanted at 1000℃ compared to the sample implanted at room temperature. The implantation of Mg ions at 1000℃ resulted in more uniform and enhanced donor-acceptor pair emission, leading to higher Mg activation.