Microstructure and gyromagnetic properties of low-sintered M-type barium hexagonal ferrite with various Ga3+ions substitutions

The adjustment of crystal structures and properties by ion substitution has received increasing interest in recent years to solve issues related to the preparation of LTCC microwave devices. In this work, Fe3+ ions were substituted in BaFe12O19 sintered at a low temperature (920 degrees C). The changes in microstructures, dielectric characteristics, and magnetic properties were all examined. The ferromagnetic resonance line -width (Delta H) of BaM ferrite was measured at magnetic fields from 6000 to 24,000 Oe. The results revealed well-grown microstructures of BaM ferrite grains at 920 degrees C to form typical hexagonal structures. The in-crease in substitution of Ga3+ ions decreased the lattice constant and cell volume of the crystals. More interestingly, the dielectric and magnetic properties depicted significant changes in the original dielectric and magnetic parameters of BaM after the substitution of Ga3+ ions. The permittivity (epsilon ') rose to a maximum of 16.36 at x = 0.4, while the dielectric loss angle tangent (tan delta epsilon) declined to 1.2 x 10(boolean AND)-3. As Ga3+ ions rose, the saturation magnetization 4 pi Ms decreased from 3168.58 Gauss to 2571.18 Gauss. The remanence (Mr) reached a maximum value of 31.07 emu/g at x = 0.4. The ferromagnetic resonance linewidth (Delta H) of BaM ferrite sample at 31 GHz attained a minimum value of 4216.336 Oe at x = 0.8. In sum, these findings look promising for future fabrication of LTCC microwave RF devices.(c) 2022 Elsevier B.V. All rights reserved.

Automated summary

The adjustment of crystal structures and properties by ion substitution has gained increasing interest in recent years for solving issues in LTCC microwave device preparation. In this study, Fe3+ ions were substituted in low-temperature sintered BaFe12O19, and the changes in microstructures, dielectric characteristics, and magnetic properties were examined. The results showed significant changes in the crystal lattice, dielectric properties, and magnetic parameters of BaM after the substitution of Ga3+ ions.