4.7 Article

Crystal structures, lattice vibrational characteristics, and dielectric response of Mg3(VO4)2 microwave dielectric ceramics sintered at different temperatures

Journal

JOURNAL OF ALLOYS AND COMPOUNDS
Volume 965, Issue -, Pages -

Publisher

ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2023.171077

Keywords

Microwave Dielectric Ceramics; Structure-Property Relationships; Crystal Structures; Lattice Vibrational Characteristics; Dielectric Response; Sintering Temperatures

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Mg3(VO4)2 ceramics were fabricated using solid-state sintering method at different temperatures. The effects of sintering temperature on its phase evolution, crystal structure, dielectric response, and lattice vibrational characteristics were investigated. The sample sintered at 1050 degrees Celsius exhibited the best dielectric properties.
Mg3(VO4)2 (MVO) microwave dielectric ceramics were fabricated by a conventional solid-state sintering method at different sintering temperatures (Ts) between 1000 degrees C and 1100 degrees C. The effects of Ts on the phase evolution, the crystal structures, the dielectric responses, and the lattice vibrational characteristics of MVO were investigated. XRD patterns after Rietveld refinement were applied to analyze the phase evolution and the crystal structures of the samples, which shows the orthorhombic structure with the space group of Cmca for the MVO ceramics. Micrograph from scanning electron microscopy shows a uniform and dense crystal structure with the highest bulk density for the MVO sample sintered at 1050 degrees C. Raman scattering spectroscopy and infrared reflectance spectroscopy were used to dissect the lattice vibrational characteristics of the MVO ceramics. There are two types of vibrational modes of the MVO samples, i.e., the external modes caused by the deformation of [VO4]3- and the rotational and translational vibrations of the lattices, the internal modes attributed to the asymmetric stretching vibrations of V-O bonds. The intrinsic dielectric properties were determined by fitting the data with a four-parameter semi-quantum (FPSQ) model. Modes 1, 2, and 4, associated with the external modes, have the greatest contribution coefficient of 65.58% to the dielectric constant, and Mode 1 has the greatest contribution coefficient of 51.40% to the dielectric loss. The structure-property relationships were semiquantitatively mathematically established according to the Raman modes. The MVO sample sintered at 1050 degrees C has the best dielectric properties of & epsilon;r = 9.59 and Q x f = 41,193 GHz (f = 13.69 GHz).

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