Characterization of tunnel oxide passivated contact fabricated by sputtering and ion implantation technique

Tunnel oxide passivated contact (TOPCon) structures using highly doped n-type polycrystalline silicon were fabricated using facing target sputtering and ion implantation techniques for a SiH4-free fabrication process of high-efficiency silicon solar cells. We investigated the structural and electrical properties of the highly doped n-type poly-Si layers to optimize the ion implantation process. We also investigated the surface passivation quality of our TOPCon structure. An effective carrier lifetime of 2.01 ms and an implied open circuit voltage of 704 mV were obtained for our sample annealed at 950 degrees C. The sample also exhibits a low contact resistance of 3.22 x 10(-3) omega cm(-2). Our results open the way for SiH4-free fabrication of silicon solar cells with a TOPCon structure.

Automated summary

In this study, tunnel oxide passivated contact (TOPCon) structures using highly doped n-type polycrystalline silicon were fabricated for SiH4-free fabrication process of high-efficiency silicon solar cells. The researchers investigated the structural and electrical properties of the highly doped n-type poly-Si layers and optimized the ion implantation process. The surface passivation quality of the TOPCon structure was also evaluated. The research results demonstrate the potential of SiH4-free fabrication of silicon solar cells with a TOPCon structure.