Effect of nitrogen introduced at the SiC/SiO2 interface and SiC side on the electronic states by first-principles calculation

In this study, using first-principles calculations, we investigate the behavior of electrons at the SiC/SiO2 interface when nitrogen is introduced as a dopant within a few nm of the SiC surface. When a highly doped nitrogen layer (5 x 10(19) cm(-3)) is introduced within a few nm of the SiC(112 0) surface, the electronic state is not significantly affected if the doping region is less than 4 nm. However, if the doping region exceeds 4 nm, the effect of quantum confinement decreases, which increases the electron density induced in the inversion layer. As for the wavefunction, even when an electric field is applied, the peak shifts toward the direction in which the electrons are pulled away from the interface. This reduces the effect of electron scattering at the interface and improves electron mobility.

Automated summary

In this study, the effect of introducing nitrogen as a dopant near the SiC/SiO2 interface was investigated using first-principles calculations. It was found that when a highly doped nitrogen layer is introduced within a few nm of the SiC surface, the electronic state is not significantly affected if the doping region is less than 4 nm. However, if the doping region exceeds 4 nm, the quantum confinement effect decreases, resulting in an increase in the electron density induced in the inversion layer. Furthermore, the application of an electric field shifts the peak of the wavefunction away from the interface, reducing electron scattering and improving electron mobility.