Nanocrystalline gallium nitride electron transport layer for cesium lead bromide photovoltaic power converter in blue light optical wireless power transmission

Nanocrystalline gallium nitride (nc-GaN) layers were deposited by RF magnetron sputtering for the electron transport layer of the cesium lead bromide (CsPbBr3) photovoltaic power converter. We investigated the structural and electrical properties of the nc-GaN layers and found that substrate heater temperature is a key factor to determine the electrical conductivity of the nc-GaN layers. CsPbBr3 photovoltaic power converters with nc-GaN electron transport layers show good photovoltaic performance. The best performance was obtained at the substrate heater temperature of 550 degrees C and a conversion efficiency of 5.56% (V (OC) = 1.24 V, J (SC) = 6.68 mA cm(-2), FF = 0.66) under AM1.5 G illumination with a light intensity of 100 mW cm(-2). The estimated conversion efficiency under blue light with a wavelength of 450 nm is 28.8%.

Automated summary

Nanocrystalline gallium nitride (nc-GaN) layers were deposited by RF magnetron sputtering as the electron transport layer of the cesium lead bromide (CsPbBr3) photovoltaic power converter. The study investigated the structural and electrical properties of the nc-GaN layers and found that substrate heater temperature plays a crucial role in determining the electrical conductivity. CsPbBr3 photovoltaic power converters with nc-GaN electron transport layers exhibited good photovoltaic performance, with the highest conversion efficiency of 5.56% achieved at a substrate heater temperature of 550 degrees C. The estimated conversion efficiency under blue light with a wavelength of 450 nm was 28.8%.