Improvement of carrier transport properties of CsPbBr3 thin films by moisture absorption and TbCl3 doping technique

Moisture absorption and TbCl3 doping of CsPbBr3 thin films were investigated to improve the carrier transport properties. We found that post-deposition moisture-absorbing treatment improved the carrier diffusion length of CsPbBr3 thin films. The moisture-absorbing treatments under a relative humidity of about 20%-40% were effective to improve the carrier diffusion length. TbCl3 doping during the thermal evaporation of CsPbBr3 affected the structure of the deposited films. An excessive amount of TbCl3 doping leads to the formation of CsPb2Br5 additional phase, but a small amount of TbCl3 doping (1%) can improve the carrier diffusion length. The moisture-absorbing treatment and TbCl3 doping are promising techniques to improve the optoelectronic properties of CsPbBr3.

Automated summary

The moisture absorption and TbCl3 doping of CsPbBr3 thin films were investigated to improve carrier transport properties. Post-deposition moisture-absorbing treatment was found to enhance the carrier diffusion length, particularly under a relative humidity of 20%-40%. TbCl3 doping during thermal evaporation affected the film structure, with excessive doping resulting in the formation of CsPb2Br5 additional phase, while a small amount (1%) improved carrier diffusion length. Moisture-absorbing treatment and TbCl3 doping show promise in enhancing the optoelectronic properties of CsPbBr3.