☆ 4.2 Article

Investigation of DC and RF characteristics of spacer layer thickness engineered recessed gate and field-plated III-nitride nano-HEMT on β-Ga2O3 substrate

INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS (2023)

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Investigation of DC and RF characteristics of spacer layer thickness engineered recessed gate and field-plated III-nitride nano-HEMT on β-Ga2O3 substrate

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