4.8 Article

A Low-Temperature, Solution-Processable, Cu-Doped Nickel Oxide Hole-Transporting Layer via the Combustion Method for High-Performance Thin-Film Perovskite Solar Cells

Journal

ADVANCED MATERIALS
Volume 27, Issue 47, Pages 7874-7880

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201503298

Keywords

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Funding

  1. Office of Naval Research [N00014-14-1-0246]
  2. Department of Energy SunShot [DE-EE0006710]
  3. Asian Office of Aerospace RD [FA2386-11-1-4072]
  4. Boeing-Johnson Foundation

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Low-temperature, solution-processable Cu-doped NiOX (Cu:NiOx), prepared via combustion chemistry, is demonstrated as an excellent hole-transporting layer (HTL) for thin-film perovskite solar cells (PVSCs). Its good crystallinity, conductivity, and hole-extraction properties enable the derived PVSC to have a high power conversion efficiency (PCE) of 17.74%. Its general applicability for various elecrode materials is also revealed.

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