Journal
CERAMICS INTERNATIONAL
Volume 41, Issue 3, Pages 4742-4749Publisher
ELSEVIER SCI LTD
DOI: 10.1016/j.ceramint.2014.12.023
Keywords
CuInS2; Thin films; Spray pyrolysis; Growth temperature; Absorber materials
Categories
Funding
- Romanian government, Center for Renewable Energy System and Recycling-R&D Institute of the Transilvania University of Brasov
- AUF through EUGEN IONESCU post-doctoral scholarship program
- PNII Cooperation project [282/2014]
- UEFISCDI Romania
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CuInS2 absorber thin films were prepared by spray pyrolysis deposition at different substrate temperatures (250 degrees C, 300 degrees C and 350 degrees C) using an aqueous solution of CuCl2, InCl3 and SC(NH2)2 at a precursor molar ratio of Cu:In:S=1:1.25:4.5. The effect of the substrate's temperature on the structural, morphological, optical and electrical properties of CuInS2 thin films was investigated. The X-ray diffraction patterns showed that CuInS2 has a tetragonal structure. The results show that the films deposited at 300 degrees C have improved electrical conduction and photocurrent values. When increasing the substrate's temperature the absorbance decreases while the band gap energy increases, as a combined effect of crystallinity, morphology and deviation from stoichiometry. (C) 2014 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
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