Polymeric Interlayer in CdS-Free Electron-Selective Contact for Sb2Se3 Thin-Film Solar Cells

High open-circuit voltage in Sb2Se3 thin-film solar cells is a key challenge in the development of earth-abundant photovoltaic devices. CdS selective layers have been used as the standard electron contact in this technology. Long-term scalability issues due to cadmium toxicity and environmental impact are of great concern. In this study, we propose a ZnO-based buffer layer with a polymer-film-modified top interface to replace CdS in Sb2Se3 photovoltaic devices. The branched polyethylenimine layer at the ZnO and transparent electrode interface enhanced the performance of Sb2Se3 solar cells. An important increase in open-circuit voltage from 243 mV to 344 mV and a maximum efficiency of 2.4% was achieved. This study attempts to establish a relation between the use of conjugated polyelectrolyte thin films in chalcogenide photovoltaics and the resulting device improvements.

Automated summary

In this study, a ZnO-based buffer layer with a polymer-film-modified top interface was proposed to replace CdS in Sb2Se3 photovoltaic devices, addressing the issue of high open-circuit voltage. The addition of a branched polyethylenimine layer at the ZnO and transparent electrode interface enhanced the performance of Sb2Se3 solar cells, resulting in an important increase in open-circuit voltage from 243 mV to 344 mV and a maximum efficiency of 2.4%. This study aims to establish a relation between the use of conjugated polyelectrolyte thin films in chalcogenide photovoltaics and the resulting device improvements.