Journal
INTERNATIONAL JOURNAL OF MODERN PHYSICS B
Volume -, Issue -, Pages -Publisher
WORLD SCIENTIFIC PUBL CO PTE LTD
DOI: 10.1142/S021797922350248X
Keywords
Potential well; trap level; Poole-Frenkel effect; single crystal
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Single crystals of TlGaTe2 were grown using the Bridgman method. Current-voltage characteristics were measured, revealing the presence of the Poole-Frenkel effect in the nonlinear region along both the parallel and perpendicular crystallographic axes. The concentration of ionized centers (N-t), mean free path (lambda), Frenkel coefficient (beta), and shape of the potential well in TlGaTe2 crystals were calculated.
The single crystals of TlGaTe2 were grown by the Bridgman method. The current-voltage characteristics were performed for obtained crystals and it was determined that the Poole-Frenkel effect occurs in the nonlinear region of the current in the directions parallel and perpendicular to the crystallographic axis. The calculated values of the concentration of ionized centers N-t, the mean free path lambda, the values of the Frenkel coefficient beta and the shape of the potential well in TlGaTe2 crystals are determined.
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