Journal
ADVANCED MATERIALS
Volume 27, Issue 41, Pages 6431-+Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201502375
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Funding
- Research Grants Council of Hong Kong [N_CUHK405/12, AoE/P-02/12, CUHK1/CRF/12G, CUHK142075E/15]
- CUHK Group Research Scheme
- Innovation and Technology Commission [ITS/096/14]
- National Natural Science Foundation of China [61229401, 11574119]
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Lateral WS2-MoS2 heterostructures are synthesized by a shortcut one-step growth recipe with low-cost and soluble salts. The 2D spatial distributions of the built-in potential and the related electric field of the lateral WS2-MoS2 heterostructure are quantitatively analyzed by scanning Kelvin probe force microscopy revealing the fundamental attributes of the lateral heterostructure devices.
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