Journal
ADVANCED MATERIALS
Volume 28, Issue 1, Pages 57-+Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201504307
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Funding
- National Science Foundation [DMR 0856060, DMR 1436263, DMR-1121053]
- NSF
- Direct For Mathematical & Physical Scien [0856060] Funding Source: National Science Foundation
- Division Of Materials Research [0856060] Funding Source: National Science Foundation
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Controlled device parameters of high-mobility polymer field-effect transistors (FETs) are demonstrated by modest doping and charge compensation. Through fleeting chemical vapor treatments of aligned poly[4-(4,4-dihexadecyl-4H-cyclopenta[1,2-b: 5,4-b'] dithiophen-2-yl)alt-[1,2,5] thiadiazolo-[3,4-c] pyridine] (PCDTPT) thin films as the charge transport layer in the FET channel, the FET properties are tailored by controlling doping concentration of the PCDTPT adjacent to metal electrodes.
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