Journal
IEEE TRANSACTIONS ON POWER ELECTRONICS
Volume 38, Issue 6, Pages 6806-6810Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TPEL.2023.3253716
Keywords
Silicon carbide; Silicon; Topology; MOSFET; Insulated gate bipolar transistors; Patents; Modulation; multilevel converters; silicon carbide
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This letter introduces the patented hybrid multilevel converters with silicon (Si) and silicon carbide (SiC) devices (US10191531B2) and its impact to industry and academia. The patent invented a novel concept by combining high frequency switched SiC devices and fundamental frequency switched Si devices, therefore, balances the cost and performance. The patent has been implemented in the world's first megawatt-class and multikilovolt hybrid electric aircraft system. Additionally, there are many worldwide following up works in extended topologies, control, and modulation methods.
This letter introduces the patented hybrid multilevel converters with silicon (Si) and silicon carbide (SiC) devices (US10191531B2) and its impact to industry and academia. The patent invented a novel concept by combining high frequency switched SiC devices and fundamental frequency switched Si devices, therefore, balances the cost and performance. The patent has been implemented in the world's first megawatt-class and multikilovolt hybrid electric aircraft system. Additionally, there are many world-wide following up works in extended topologies, control, and modulation methods.
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