Journal
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
Volume 70, Issue 4, Pages 434-441Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNS.2023.3252439
Keywords
Silicon-on-insulator; Couplings; Logic gates; Transistors; Electric potential; Silicon; Threshold voltage; Coupling factor; fully depleted silicon on insulator (FDSOI); technology computer-aided design (TCAD); total ionizing dose (TID)
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Experimental results show the response of 22 nm fully depleted silicon on insulator (FDSOI) transistors to 10 keV x-rays. The extracted coupling factor between the front- and back-gates of the device exhibits a non-linear dependence on total ionizing dose (TID). A new model is proposed to account for the depletion region in the well under the buried oxide, resulting in a revised coupling factor that fits well to experimental data and simulations.
Experimental results show the response of 22 nm fully depleted silicon on insulator (FDSOI) transistors to 10 keV x-rays. The extracted coupling factor between the front- and back-gates of the device shows a divergence from the traditionally assumed coupling factor exhibiting a non-linear dependence on total ionizing dose (TID). A depletion region in the well under the buried oxide is included in the model of the device. The coupling factor is rederived using the new model following the previous derivation. The new coupling factor has a dependence on TID received by the device. Verification of the new model is performed with comparisons to the experimental data and technology computer-aided design (TCAD) simulations. The new model fits well to data and simulations.
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