Journal
IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS
Volume 70, Issue 4, Pages 4120-4127Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TIE.2022.3174294
Keywords
Chaotic circuit; dynamic behavior; mathematical model; memristor
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In this article, a Cu-doped TiO2-x nanoscale memristor is built and its accurate mathematical model is established. The reliable performance of the memristor and the correctness of its mathematical model are demonstrated through numerical simulations and hardware experiments, revealing its chaotic system dynamics.
TiO2 has attracted significant attention as a prototypical material for memristors. In this article, a Cu-doped TiO2-x nanoscale memristor with a structure of T/TiO2-x:Cu/Cu is built, whose faithful mathematical model is established based on the memristive behaviors and its switching mechanism. Using this model, a chaotic system is constructed and its complex dynamics are investigated by numerical simulations. Furthermore, hardware experiments are also designed to verify the model in a chaotic circuit. The chaotic attractors obtained by simulations and hardware experiments are consistent, demonstrating the reliable performance of the Ti/TiO2-x:Cu/Cu memristor and the correctness of its mathematical model. The processes of memristor from manufacture and mathematical modeling to its verification in a chaotic circuit are presented.
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