Electrical Properties of Boron-Doped Diamond MOSFETs With Ozone as Oxygen Precursor for Al2O3 Deposition

Boron-doped diamond (B-diamond) MOS capacitors and MOSFETs are fabricated and character-ized. The Al2O3 gate insulator is deposited by an atomic layer deposition (ALD) technique with ozone as oxy-gen precursor. Leakage current density for the Al2O3 (ozone)/B-diamond MOS capacitor is 2.7 x 10(-5) A/cm(2) at -9.0 V. Comparing to the capacitance-voltage (CV) curve of the Al2O3 (water)/B-diamond MOS capacitor, there is no residual capacitance and improved negative flat band voltage shift for the Al2O3 (ozone)/B-diamond MOS capac-itor. The Al2O3 (ozone)/B-diamond MOSFET operates well with the ON/OFF ratio of around 108, which is much higher than that of the previous Al2O3 (water)/B-diamond MOSFET. After annealing at 500 degrees C for as long as 10 h, the Al2O3 (ozone)/B-diamond MOSFET can still operate well with the ON/OFF ratio larger than 10(6).

Automated summary

Boron-doped diamond (B-diamond) MOS capacitors and MOSFETs were fabricated and characterized using an atomic layer deposition (ALD) technique with ozone as the oxygen precursor. The Al2O3 (ozone)/B-diamond MOS capacitor showed a leakage current density of 2.7 x 10(-5) A/cm(2) at -9.0 V. Compared to the Al2O3 (water)/B-diamond MOS capacitor, the Al2O3 (ozone)/B-diamond MOS capacitor exhibited no residual capacitance and an improved negative flat band voltage shift. The Al2O3 (ozone)/B-diamond MOSFET demonstrated a high ON/OFF ratio of around 108, which is significantly higher than the previous Al2O3 (water)/B-diamond MOSFET. Additionally, the Al2O3 (ozone)/B-diamond MOSFET remained functional with an ON/OFF ratio greater than 10(6) even after annealing at 500 degrees C for 10 hours.