Effect of Hydrogen on Electrical Performance of Pt/Au beta-Ga2O3 (001) Schottky Barrier Diodes

The effect of hydrogen on b-gallium oxide (Ga2O3) (001) Schottky barrier diode (SBD) device has been studied in this article for the first time. It was found that the electrical performance of the beta-Ga2O3 SBDs changed significantly after hydrogen treatment, including the turn-on voltage (V-on) decreased by 0.3 V and the forward (JF) current density increased by 28frequency-dependent conductance technique, it is found that the time constants were decreased from 0.09-0.3 to 0.06-0.09 mu s after hydrogen treatment. Meanwhile, the density of interface states decreases from 2.1 x 10(12)-4.2 x 10(12) to 7.5 x 10(11)- 1.6 x 10(12) cm(-2).eV(-1) with a decrease in trap activation energy from 0.1-0.13 to 0.09-0.1 eV after hydrogen treat-ment. Utilizing the time-of-flight secondary ion mass spectrometry (TOF-SIMS), it is observed that the density of hydrogen at the Pt/Ga2O3 interface is increased by more than one order of magnitude for the device with hydrogen treatment. The effect of hydrogen on Pt/Au beta-Ga2O3 SBDs can be mainly attributed to the passivation of traps by hydrogen atoms near the Pt/Ga2O3 interface.

Automated summary

This article studies the effect of hydrogen on b-gallium oxide (Ga2O3) (001) Schottky barrier diode (SBD) device for the first time. It is found that the electrical performance of the beta-Ga2O3 SBDs changed significantly after hydrogen treatment, with a decrease in turn-on voltage (V-on) by 0.3 V and an increase in forward (JF) current density by 28%. Frequency-dependent conductance technique reveals that the time constants decreased from 0.09-0.3 to 0.06-0.09 mu s after hydrogen treatment. The density of interface states and trap activation energy also decreased after hydrogen treatment. Time-of-flight secondary ion mass spectrometry (TOF-SIMS) shows an increased density of hydrogen at the Pt/Ga2O3 interface for the device with hydrogen treatment. The effect of hydrogen on Pt/Au beta-Ga2O3 SBDs is mainly attributed to the passivation of traps by hydrogen atoms near the Pt/Ga2O3 interface.