Low-Voltage Operated High DC Gain Amplification Stage Based on Large-Area Manufacturable Amorphous Oxide Semiconductor Thin-Film Transistor

The industry-standard amorphous metaloxide-semiconductor (AOS) thin-film transistor (TFT) technology is demonstrated for making low-voltage high intrinsic gain devices. It is revealed by the technology computer-aided design (TCAD) simulation that, without need of making Schottky barrier contacts, large output resistance and high intrinsic gain can be achieved in a subthreshold regime for AOS TFTs. It is further proved by the measurement results with the fabricated AOS TFT from a Gen-4.5 manufacturing line. A simple single-stage zeroVGS load amplifier is implemented as a proof of concept, achieving a voltage gain larger than 50 for weak signal detection at a supply voltage of 5 V.

Automated summary

The industry-standard amorphous metaloxide-semiconductor (AOS) thin-film transistor (TFT) technology is proven to be capable of producing low-voltage high intrinsic gain devices. The simulation and measurement results demonstrate that AOS TFTs can achieve large output resistance and high intrinsic gain without the need for Schottky barrier contacts. This technology has the potential for application in weak signal detection with a voltage gain larger than 50 at a supply voltage of 5 V.