Journal
IEEE SENSORS JOURNAL
Volume 23, Issue 10, Pages 10350-10358Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSEN.2023.3264462
Keywords
Sensors; Magnetostriction; Magnetic sensors; Magnetic resonance; Substrates; Saturation magnetization; Magnetic fields; Doped zinc oxide; high ME coefficient; magnetoelectric (ME) cantilever; MEMS; weak magnetic field sensor
Ask authors/readers for more resources
This study presents a weak magnetic field sensor based on a laminated cantilever structure with a magnetostrictive layer, a piezoelectric layer, and a substrate layer. A comprehensive theoretical model is developed to optimize the device design by evaluating the impact of key structural parameters on the magnetoelectric sensing performance. A Zn-V-O film with a high piezoelectric coefficient is achieved by incorporating vanadium (V) as a dopant element. Galfenol is proposed as a suitable magnetostrictive layer. Experimental verification is conducted using sensor prototypes fabricated with MEMS technology, and the results indicate promising potential for improving weak magnetic field detection performance.
The present study introduces a weak magnetic field sensor that utilizes a laminated cantilever structure, consisting of a magnetostrictive layer, a piezoelectric layer, and a substrate layer. Consequently, the transformation from the magnetic signal to the electrical signal is accomplished through the consistent mechanical stress in both layers. A comprehensive theoretical model has been developed to evaluate the impact of key structural parameters on the magnetoelectric (ME) sensing performance, enabling the optimization of the device design. By incorporating vanadium (V) as a dopant element, a Zn-V-O film with a piezoelectric coefficient as high as 35 pm/V is fulfilled. Furthermore, the high piezomagnetic properties of Galfenol make it a suitable candidate as a magnetostrictive layer. Sensor prototypes were fabricated for experimental verification through the utilization of MEMS technology. The film was characterized using techniques, such as X-ray powder diffraction (XRD), transmission electron microscopy (TEM), and piezoelectric force microscopy (PFM). The ME testing experiments indicated that the magnetostrictive coefficient could achieve about 9.32 kV/(cm $\cdot $ Oe) at resonant frequencies for sensors with varying lengths and a 20- $\mu \text{m}$ -thick Si substrate. The proposed sensor exhibits promising potential for improving weak magnetic field detection performance.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available