A Highly Linear Temperature Sensor Operating up to 600? in a 4H-SiC CMOS Technology

In this work, a highly linear temperature sensor based on a silicon carbide (SiC) p-n diode is presented. Under a constant current biasing, the diode has an excellent linear response to the temperature (from room temperature to 600?). The best linearity (coefficient of determination R-2 = 99.98%) is achieved when the current density is 0.53 mA/cm(2). The maximum sensitivity of the p-n diode is 3.04 mV/?. The temperature sensor is fully compatible with Fraunhofer Institute (FHG) IISB's open SiC CMOS (complementary metal-oxide-semiconductor) technology, thus enabling the monolithic integration with SiC readout circuits for high-temperature applications. The sensor also features a simple fabrication process. To our knowledge, the presented device is the first SiC diode temperature sensor that does not require a mesa etch or backside contacts.

Automated summary

A highly linear temperature sensor based on a silicon carbide (SiC) p-n diode is introduced in this work. The diode shows excellent linearity in response to temperature from room temperature to 600℃ under a constant current biasing. The best linearity is achieved at a current density of 0.53 mA/cm(2), with a coefficient of determination R-2 of 99.98%. The sensor is compatible with Fraunhofer Institute (FHG) IISB's open SiC CMOS technology, allowing for monolithic integration with SiC readout circuits for high-temperature applications. This sensor is the first SiC diode temperature sensor that does not require a mesa etch or backside contacts.