A Simple Method to Extract the Thermal Resistance of GaN HEMTs From De-Trapping Characteristics

This letter proposes a new method for extracting the thermal resistance of GaN-based HEMTs using pulse recovery data. After the device temperature and trapping state are established from different quiescent power dissipations for several base-plate temperatures, the recovery profile of the drain current is measured. The recovery time is then used as a temperature-sensitive electrical parameter to extract the thermal resistance of the device. The proposed method has been applied to a Schottky-gate HEMT on SiC, for which a thermal resistance of 15.7 ?-mm/W was extracted, a value in good agreement with others reported for similar devices. Comparison with the one obtained from a step response is also done. Finally, the uncertainties of the proposed method related to the pulse width, temperature, percentage of the drain current recovery time, and averaging procedure are discussed.

Automated summary

This letter proposes a new method for extracting the thermal resistance of GaN-based HEMTs using pulse recovery data. The recovery time of the drain current is measured to extract the thermal resistance of the device. The method has been applied to a Schottky-gate HEMT on SiC, and a thermal resistance of 15.7 ?-mm/W was extracted, which is in good agreement with others reported for similar devices. The uncertainties of the proposed method related to pulse width, temperature, percentage of the drain current recovery time, and averaging procedure are discussed.