Related references
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Article
Engineering, Electrical & Electronic
Yannan Xu et al.
Summary: This study demonstrates the enhanced breakdown reliability and endurance of 10-nm Hf0.3Zr0.5O2 (HZO) by interrupting grain boundaries with an amorphous Al2O3 layer. The ferroelectric/insulator/ferroelectric structure showed significant reductions in leakage current and improvements in breakdown voltage and time-dependent dielectric breakdown lifetime, achieving >10(10) endurance with more than three orders of magnitude improvement compared to other structures. This work provides an effective strategy for enhancing the reliability of HZO-based ferroelectric devices.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
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Tingfeng Song et al.
Summary: The endurance of ferroelectric HfO2 needs to be enhanced for its commercial application. This study shows that fatigue in epitaxial Hf0.5Zr0.5O2 films can be mitigated by increasing the amount of paraelectric phase. Conversely, films almost free of parasitic monoclinic phase exhibit severe fatigue, indicating that fatigue can be inherently pronounced in ferroelectric HfO2.
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Amey M. Walke et al.
Summary: High endurance of 10(11) cycles is demonstrated in Hafnium Zirconate (HZO) MFM capacitors with La and Y dopants. La doping offers higher remnant polarization than Y. Investigation of doped layers reveals that HZO is comprised of ferroelectric domains with internal built-in electric field-induced pinned coercive field. Doping increases the pinning effect and results in two distinct groups of antialigned ferroelectric domains. The wake-up process is attributed to the gradual depinning of the domains with bipolar electric pulses. Suppression of monoclinic phase is observed in doped layers that survive 10(11) cycles.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Chemistry, Multidisciplinary
Aleksandra A. Koroleva et al.
Summary: The influence of the bottom TiO2 interfacial layer on the ferroelectric properties of TiN/HFa(0.5)Zr(0.5)O(2) capacitors was investigated. It was found that the TiO2 layer increased the polar orthorhombic phase content in the HFa(0.5)Zr(0.5)O(2) film. The crystalline structure of the HFa(0.5)Zr(0.5)O(2) film was also affected by the thickness of the TiO2 layer. Attention was given to parameters such as retention and endurance, and it was discovered that the TiO2 layer improved retention but had limitations in endurance due to phase transitions and increased electric field.
Article
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Yong Bin Lee et al.
Summary: This study investigates the effect of inserting a Ti layer in the TiN gate electrode on the performance of ferroelectric HAO films in MFIS capacitors. It is found that the Ti layer effectively scavenges oxygen in the dielectric, increasing polarization and reducing coercive voltage and capacitance equivalent thickness.
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Kasidit Toprasertpong et al.
Summary: Reducing the thickness of ferroelectric thin films like Hf0.5Zr0.5O2 (HZO) to 4 nm can lower the operating voltage and improve breakdown field, leading to enhanced data retention and endurance. While concerns such as increased crystallization temperature and pinched hysteresis behavior arise with thickness scaling, specific approaches can mitigate these issues.
ACS APPLIED MATERIALS & INTERFACES
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Peng Yuan et al.
Summary: NH3 plasma treatment was utilized to improve the ferroelectric property of TiN/HfxZryO2/TiN capacitors. Material characterization revealed that NH3 treatment promotes the formation of ferroelectric phase, optimizes the interface quality and suppresses the imprint effect, resulting in improved retention performance of the capacitors.
IEEE ELECTRON DEVICE LETTERS
(2022)
Article
Engineering, Electrical & Electronic
Mingji Su et al.
Summary: A two-step oxygen vacancy engineering technique is proposed to enhance the ferroelectricity of HZO films, and the feasibility of this technique at a low thermal process is investigated.
IEEE ELECTRON DEVICE LETTERS
(2022)
Article
Engineering, Electrical & Electronic
Hongrae Joh et al.
Summary: This study addresses the issue of monoclinic phase formation in HZO materials with increasing film thickness by inserting a dielectric interlayer. The presence of the interlayer allows independent growth of the top and bottom HZO layers, preventing loss of ferroelectricity in thicker HZO films by controlling grain size. Improved 2Pr value of 30.2 mu C/cm(2) was achieved in relatively thicker HZO films by using a TiO2 dielectric interlayer.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Engineering, Electrical & Electronic
Venkateswarlu Gaddam et al.
Summary: The study demonstrated the enhanced ferroelectric properties of MFM tri-layer capacitors fabricated using rapid thermal annealing (RTA) process at low temperature, with the TiO2 top DE layer showing the highest remanent polarization at 350 degrees Celsius.
IEEE ELECTRON DEVICE LETTERS
(2021)
Proceedings Paper
Engineering, Electrical & Electronic
Yunzhe Zheng et al.
Summary: Utilizing advanced microscopy techniques, the study unveiled the lattice dislocation and m-phase formation in HZO films during fatigue, showing the influence of oxygen vacancies, grain size, and phase interface on the process.
2021 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)
(2021)
Article
Engineering, Electrical & Electronic
Alireza Kashir et al.
Summary: By tuning the ozone pulse duration, annealing process, and metal/insulator interface, a wake-up free Hf0.5Zr0.5O2 (HZO) ferroelectric film with the highest remnant polarization value was achieved. The use of a tungsten capping electrode and insertion of a Pt layer between the interfaces helped reduce leakage current while maintaining the 2Pr value constant.
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(2021)
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APPLIED PHYSICS LETTERS
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