Channel-Length-Dependent Low-Frequency Noise Characteristics of Ferroelectric Junctionless Poly-Si Thin-Film Transistors

In this study, we explore the low-frequency noise (LFN) characteristics of hafnium-zirconium ferroelectric junctionless poly-Si thin-film transistors (FE JL TFTs) with different channel lengths (Ls). The findings reveal that the magnitude of 1/f noise decreases with a decrease in L, exhibiting the opposite trend from that of conventional FETs. Additionally, it is observed that the protrusion of poly-Si is more susceptible to damage from tensile stress during post-metal annealing in devices with longer L.

Automated summary

In this study, the low-frequency noise (LFN) characteristics of hafnium-zirconium ferroelectric junctionless poly-Si thin-film transistors (FE JL TFTs) with different channel lengths (Ls) were investigated. The results showed that the magnitude of 1/f noise decreased with a decrease in channel length, which was opposite to the trend observed in conventional FETs. Furthermore, it was observed that the protrusion of poly-Si was more vulnerable to damage from tensile stress in devices with longer channel lengths.