Fluorine Plasma Treatment for AlGaN/GaN HEMT-Based Ultraviolet Photodetector With High Responsivity and High Detectivity

AlGaN/GaN high electron mobility transistor (HEMT) has attracted great attention in ultraviolet photodetectors (UVPDs) due to the ultrahigh responsivity and high photocurrent arising from the two-dimensional electron gas (2DEG) formed in the AlGaN/GaN interface. In this letter, AlGaN/GaN HEMT-based UVPD was fabricated through fluorine plasma treatment using C4F8 gas. The dark current of the device was greatly lowered and the persistent photoconductivity (PPC) effect was effectively suppressed, leading to a high responsivity of 1.3 x 10(4) A W-1 and a high specific detectivity of 1.8 x 10(15) Jones. The present work provides a facile and cost-effective strategy for the fabrication of high-performance AlGaN/GaN HEMT-based UVPDs.

Automated summary

In this study, an AlGaN/GaN HEMT-based ultraviolet photodetector (UVPD) was fabricated by fluorine plasma treatment using C4F8 gas. The device exhibited a significantly reduced dark current and effectively suppressed the persistent photoconductivity (PPC) effect, resulting in a high responsivity of 1.3 x 10(4) A W-1 and a high specific detectivity of 1.8 x 10(15) Jones. This work provides a facile and cost-effective strategy for the fabrication of high-performance AlGaN/GaN HEMT-based UVPDs.