Investigation Between Recover Behavior and Defect With Variation of Light Source in AlGaN/GaN HEMTs After Hot-Carrier Stress

In this letter, a light recovery method is proposed to analyze defect concentration and energy level distribution by changing the wavelength. The AlGaN/GaN high electron mobility transistors (HEMTs) under hot carrier stress (HCS) conditions will experience a severe electrical degradation. The threshold voltage ( V-th ) shifts to the right, and the on current and the off current both decrease. TCAD simulations of the electric field distribution and energy bands are performed to examine the degradation behaviors under HCS on the GaN-based HEMTs. The degradation of electrical characteristics can be effectively recovered by using the illumination method in AlGaN/GaN HEMTs. In addition, the light wavelength of illumination is positively correlated with the recovery effect, which is expected to provide effective measurements and analyses for AlGaN/GaN HEMT devices, which is expected to clarify the defect energy level distribution of HEMT device degradation.

Automated summary

In this letter, a light recovery method is proposed to analyze defect concentration and energy level distribution by changing the wavelength. The AlGaN/GaN HEMTs experience severe electrical degradation under HCS conditions, with a shift in threshold voltage and decrease in on/off current. TCAD simulations are performed to examine the degradation behaviors and the use of illumination method is found to effectively recover the electrical characteristics of AlGaN/GaN HEMTs.