Inserting Interfacial Layer for Atomic-Scaled Hydrogen Control to Enhance Electrical Properties of InZnO TFTs

As the application of oxide semiconductor thin-film transistors (oxide TFTs) expands, higher electrical properties are required. Hydrogen (H) is a crucial element related to both the mobility and stability of oxide TFTs. Appropriate H incorporation induces enhanced characteristics; however, excessive H degrades TFTs. In this letter, we suggest inserting an interfacial layer (IL) deposited via plasma-enhanced atomic layer deposition of several cycles to control H at the atomic-scale. As the number of IL deposition cycles increase from 0 to 10 cy, both mobility and stability improve. Furthermore, TFT with IL of 15 cy lost its on/off characteristic. Considering the analysis results, it was confirmed that the control of H concentration through IL can effectively improve the electrical characteristics of oxide TFTs. The oxide TFT with IL of 10 cy and optimized incorporation of H exhibits a high mobility of 50.12 cm(2)/V.s with great stability.

Automated summary

This study proposes the use of an interfacial layer (IL) deposited via plasma-enhanced atomic layer deposition to control the hydrogen (H) concentration and improve the electrical properties of oxide TFTs. As the number of IL deposition cycles increases, both the mobility and stability of the TFTs improve. However, TFTs with an IL of 15 cy lose their on/off characteristic. Controlling the H concentration through IL effectively enhances the electrical characteristics of oxide TFTs. The oxide TFT with a 10 cy IL and optimized H incorporation exhibits a high mobility of 50.12 cm(2)/V.s and great stability.