4.7 Article

Selective extraction and separation of gallium(III) from indium(III) in chloride medium using di(2-ethylhexyl) (N, N?-di(2-ethylhexyl) amino methyl) phosphonate and stripping with water

Journal

HYDROMETALLURGY
Volume 217, Issue -, Pages -

Publisher

ELSEVIER
DOI: 10.1016/j.hydromet.2023.106035

Keywords

Gallium; Indium; Solvent extraction; Aminophosphonate; Separation

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A new aminophosphonate extractant, di(2-ethylhexyl) (N, N'-di(2-ethylhexyl) amino methyl) phosphonate (L), was synthesized and used for the extraction and separation of gallium and indium from chloride solution. The maximum separation factors SFGa/In reached 995, higher than those of its analogues Cextrant 230 (SFGa/In = 471) and BEADP (SFGa/In = 201) under optimal acidity conditions. The extracted complexes were identified as HGaCl4L2 and InCl3L2. The extraction reactions of gallium and indium were both endothermic. The loading capacities of 30 vol% L for Ga and In were 32.9 g/L and 25.2 g/L, respectively. Gallium and indium loaded in the organic phase can be effectively stripped by distilled water, H2SO4, and HNO3. A process was developed for the separation and purification of gallium, with Ga2O3 purity increasing from 98.4% to 99.97% and a yield of 92.5%.
An aminophosphonate extractant, di(2-ethylhexyl) (N, N '-di(2-ethylhexyl) amino methyl) phosphonate (abbreviated as L) was synthesized and applied for the extraction and separation of gallium and indium from chloride solution. The maximum separation factors SFGa/In reached 995, which is higher than those obtained with its analogues such as Cextrant 230 (SFGa/In = 471) and BEADP (SFGa/In = 201) at the optimum acidity conditions. The extracted complexes were determined to be HGaCl4L2 and InCl3L2. The extraction reactions of gallium and indium were both endothermic. The loading capacities of 30 vol% L for Ga and In were 32.9 g/L and 25.2 g/L, respectively. The loaded gallium and indium in organic phase can be effectively stripped by distilled water, H2SO4 and HNO3. A process was established for the separation and purification of gallium, by which the purity of Ga2O3 increases from 98.4% to 99.97% with a yield of 92.5%.

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