Lattice dynamics and dielectric characteristics of c-oriented SBN-50 thin films grown on a Pt(111)/Al2O3(0001) substrate

The lattice dynamics and dielectric properties of Ba0.5Sr0.5Nb2O6 ferroelectric thin films grown by high-frequency RF-deposition in an oxygen atmosphere on a Pt(111)/Al2O3 substrate (c - cut) were studied. It has been established that in the film, in comparison with the bulk material, the transition temperature from the ferroelectric to the paraelectric phase increases. Dielectric spectroscopy data have shown that the Ba0.5Sr0.5Nb2O6/Pt/Al2O3 heterostructure exhibits the behavior of a ferroelectric relaxor. The detected Burns temperature, T-b, is 180-190 degrees C.

Automated summary

The lattice dynamics and dielectric properties of Ba0.5Sr0.5Nb2O6 ferroelectric thin films grown by high-frequency RF-deposition on a Pt(111)/Al2O3 substrate were investigated. The film exhibited a higher transition temperature from the ferroelectric to the paraelectric phase compared to the bulk material. The Ba0.5Sr0.5Nb2O6/Pt/Al2O3 heterostructure showed behavior characteristic of a ferroelectric relaxor, with a detected Burns temperature of 180-190 degrees Celsius.