Junctionless nanosheet gate-all-around transistors fabricated on void embedded silicon on insulator substrate

A novel junctionless gate-all-around (GAA) transistor with ultrathin nanosheet GAA channel and self-aligned raised source/drain (RSD) is successfully designed and fabricated on void embedded silicon on insulator (VESOI) substrate through a much simpler fabrication process. Devices with as thin as 13-nm nanosheet GAA channel thickness exhibit excellent electrical characteristics: on/off current ratio of 10(6) and on-state drive current of 58 mu A/mu m. Although the parasitic planar channel component still exists, the device performance is decisively dominated by the GAA channel, and further boosted by the junction-free bulk conduction mechanism and the self-aligned RSD structure.

Automated summary

A novel junctionless gate-all-around (GAA) transistor with ultrathin nanosheet GAA channel and self-aligned raised source/drain (RSD) was successfully designed and fabricated on void embedded silicon on insulator (VESOI) substrate using a simpler fabrication process. Devices with a channel thickness as thin as 13 nm exhibited excellent electrical characteristics, with an on/off current ratio of 10(6) and an on-state drive current of 58 μA/μm. Despite the presence of parasitic planar channel component, the device performance was predominantly determined by the GAA channel, which was further enhanced by the junction-free bulk conduction mechanism and the self-aligned RSD structure.