Journal
CERAMICS INTERNATIONAL
Volume 41, Issue -, Pages S356-S360Publisher
ELSEVIER SCI LTD
DOI: 10.1016/j.ceramint.2015.03.178
Keywords
Thin films; BNT-based; Dielectric; Piezoelectric
Categories
Funding
- Specialized Research Fund for the Doctoral Program of Higher Education of China [20120072130001]
- Nanotechnology Project of Shanghai Science and Technology Committee [11nm0502800]
- Innovative Research Groups of the National Natural Science Foundation of China [51121064]
- Project of Shandong Province Higher Educational Science and Technology Program [J14LA10]
- Natural Science Foundation of Shandong Province of China [ZR2014JL030]
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0.755(Bi0.5Na0.5)TiO3-0.065BaTiO(3)-0.18SrTiO(3) (BNT-BT-ST) thin films were deposited on the Pt(111)/Ti/SiO2/Si substrates with seed layer. Extremely enhanced electrical properties exhibited in the BNT-BT-ST film with seed layer, such as large dielectric constant (630) and piezoelectric coefficient d(33) (140 pm/V) and low dielectric loss (0.032). The enhancement of electrical properties can be attributed to the seed layer, which offers nucleation site to reduce crystallization activation energy and facilitates polarization response. The seed layer also acts as a capacitive interface layer, which reduces the vacancy-type defects effectively. (C) 2015 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
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