Growing Cu2ZnSnS4 Thin Film at Low Temperature Using a New Improved Configuration of Close-Distance CVD Technique

This study presents a new possibility to deposit the polycrystalline Cu2ZnSnS4 (CZTS) thin film at low temperature using an improved close-distance chemical vapor deposition reactor. Firstly, a theoretical study is conducted to predict the iodine pressure (P-I2) and the substrate temperature (T-s) as the optimal conditions for the deposition of CZTS. The theoretical model is based on the minimization of the Gibbs energy of the Cu-Zn-Sn-S-I chemical system. An experimental study is realized, and the predicted optimal conditions to obtain quasi-stoichiometric depositions are tested. The X-ray diffraction, Raman spectroscopy, energy dispersive spectroscopy, scanning electron microscopy, and UV-vis-NIR spectroscopy are used to analyze the thin films elaborated at substrate temperatures of T-s = 400 and 550 degrees C for iodine pressure P-I2 = 0.03 x 10(5) Pa. With the help of the thermodynamical calculations, the results show that it is possible to grow a good quality CZTS thin film at a low substrate temperature of 400 degrees C.

Automated summary

This study presents a new possibility for depositing polycrystalline Cu2ZnSnS4 (CZTS) thin films at low temperature using an improved close-distance chemical vapor deposition reactor. The optimal conditions for CZTS deposition, including iodine pressure (P-I2) and substrate temperature (Ts), are predicted through a theoretical study based on the minimization of the Gibbs energy of the Cu-Zn-Sn-S-I chemical system. Experimental analyses confirm the feasibility of obtaining quasi-stoichiometric CZTS thin films at a low substrate temperature of 400 degrees C. Thermodynamic calculations indicate that good quality CZTS thin films can be grown at this low temperature.