Journal
ADVANCED MATERIALS
Volume 27, Issue 34, Pages 4975-+Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201502292
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Funding
- Defense Threat Reduction Agency [HDTRA1-14-1-0030]
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Cd2+ causes deep traps on the surface of CdTe quantum dots (QDs) often leading to a long response time for a photodetector. Poly(3-hexylthiophene) (P3HT) can be used to selectively passivate the Cd2+-related deep traps by forming a Cd-S bond, while maintaining the shallow traps. By tailoring the trap depth of the CdTe QDs, a high gain, fast response, and low noise P3HT: CdTe nano-composite photodetector is achieved.
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