Journal
ADVANCED MATERIALS
Volume 28, Issue 22, Pages 4441-+Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201501828
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Funding
- Samsung Electronics
- Air Force Office of Scientific Research [FA9550-15-1-0106]
- MSIP (Ministry of Science, ICT, and Future Planning), Korea, under the IT Consilience Creative Program [NIPA-2014-H0201-14-1001]
- Taiwan National Science Council [102-2917-i-002-087]
- Marie Curie Fellowship, TECNIOSPRING
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Mechanically durable stretchable transistors are fabricated using carbon nanotube electrical components and tough thermoplastic elastomers. After an initial conditioning step, the electrical characteristics remain constant with strain. The strain-dependent characteristics are similar in orthogonal stretching directions. Devices can be impacted with a hammer and punctured with a needle while remaining functional and stretchable.
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